Allicdata Part #: | PMV48XP/MIR-ND |
Manufacturer Part#: |
PMV48XP/MIR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 20V SOT23 |
More Detail: | P-Channel 20V 3.5A (Ta) 510mW (Ta), 4.15W (Tc) Sur... |
DataSheet: | PMV48XP/MIR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 4.5V |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 510mW (Ta), 4.15W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1nF @ 10V |
Vgs (Max): | ±12V |
Series: | -- |
Vgs(th) (Max) @ Id: | 1.25V @ 250µA |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 2.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
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PMV48XP/MIR is a single FET MOSFET, which is specifically designed for use in power-sensitive applications where resolution of low-side current control is critical. It is the latest evolution of the popular 48XP/MIR family of FET MOSFETs, which offers customers a cost-effective solution to their demanding power requirements. In this article, we will discuss the application field and working principle of PMV48XP/MIR.
The PMV48XP/MIR FET MOSFET has two operating modes: Linear and Non-Linear. In linear mode, current is regulated by a control signal whose magnitude is proportional to the applied voltage. This allows for the control of currents at the very low end of the current range, where accuracy and resolution are of paramount importance. The linear mode is used for applications such as power supplies and power amplifiers. The Non-Linear mode is used for higher current applications and is used to control higher currents than what can be controlled in linear mode. This is useful for voltage regulators, LED drivers, and other applications.
The PMV48XP/MIR FET MOSFET is constructed from a P-type MOSFET and is able to operate at voltages up to 4V. It is capable of providing current levels up to 10A and is designed to be thermally robust in highly-dynamic applications. This FET MOSFET also features a low on-resistance and a high-current rating, both of which make it a good choice for applications which require increased levels of current over what is normally achievable.
The PMV48XP/MIR FET MOSFET is also an ideal choice for use in power-sensitive circuits. This is because it offers excellent switching performance and high-current capability. The FET MOSFET features a maximum power dissipation of up to 2.4 Watts, which means that it is capable of providing stable operation in high-current circuits. The FET MOSFET also has a high speed turn-on and turn-off time, which makes it well suited for use in sensitive, high-frequency applications.
The working principle of the PMV48XP/MIR FET MOSFET is simple. When a voltage is applied to the gate of the FET MOSFET, the source and drain of the device become electrically connected, thus allowing a current to flow. This current is regulated by the applied voltage, and the higher the voltage the higher the current. By controlling the voltage applied to the gate of the device, a user can control the amount of current flowing through the circuit.
In summary, the PMV48XP/MIR is a single FET MOSFET designed specifically for use in power-sensitive applications. It offers excellent switching performance and high current capability, as well as a low on-resistance and high-current rating. It is capable of providing current levels up to 10A and is able to withstand up to 2.4 Watts of power dissipation. Its simple working principle allows for the control of low-side current control with good resolution, making it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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