PMV45EN2R Allicdata Electronics
Allicdata Part #:

1727-2307-2-ND

Manufacturer Part#:

PMV45EN2R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V SOT23
More Detail: N-Channel 30V 4.1A (Ta) 510mW (Ta), 5W (Tc) Surfac...
DataSheet: PMV45EN2R datasheetPMV45EN2R Datasheet/PDF
Quantity: 42000
Stock 42000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 510mW (Ta), 5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 209pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.3nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 42 mOhm @ 4.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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PMV45EN2R Application Field and Working Principle

PMV45EN2R is one of the many types of transistors and FETs (Field Effect Transistors) and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), which are single devices intended for power switch applications. These devices are used to control current and voltage flows, which in turn improves the efficiency of electrical circuits.

PMV45EN2R Application Field

PMV45EN2R transistors can be used in a variety of applications, including switching voltage regulators, motor control circuits, and the control of current in solenoid, or electromechanical devices. This type of power switch especially enables portable equipment to be powered with low voltage DC supplies. It also can be used to control switching in many types of audio-visual systems, or lighting systems, thus playing a critical role in the operation of these products.

PMV45EN2R Working Principle

PMV45EN2R is a type of enhancement mode MOSFET, a three terminal device where the gate, source and drain terminals each have unique roles and interactions with one another. The gate terminal is used to control the flow of current from source to drain, and is used in digital circuits and logic devices as an ON/OFF switch. The source terminal represents the starting point for the current and is essentially a connection point for the material through which the current will flow. The drain terminal serves as the output connection point for current, and often receives the power from a power source (Vdd).

The operation of the PMV45EN2R MOSFET is determined by “Punch Through” technology, which enables the device to provide with high resistance when the gate voltage increases over the threshold values. According to the datasheet, the PMV45EN2R provides high voltage blocking and high-speed switching, with multiple gate-controlled maximum values. It is also specified to have high-speed switching, with very low gate drive requirements, which makes it easier to control.

Conclusion

PMV45EN2R is a unique type of enhancement mode MOSFET available for power switch applications on the market. It has multiple gate-controlled maximum values, and provides blocking and switching at high voltage and very high speed, with low gate drive requirements. The device is ideal for portable equipment, audio-visual systems, lighting systems, and a variety of digital and logic circuits.

The specific data is subject to PDF, and the above content is for reference

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