Allicdata Part #: | 1727-1377-2-ND |
Manufacturer Part#: |
PMV50UPE,215 |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 20V 3.2A TO-236AB |
More Detail: | P-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount T... |
DataSheet: | PMV50UPE,215 Datasheet/PDF |
Quantity: | 6000 |
3000 +: | $ 0.12633 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 24pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 15.7nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 66 mOhm @ 3.2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 3.2A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PMV50UPE,215 is an enhancement-mode vertical Trench Metal Oxide Field Effect Transistor (MOSFET) which offers superior switching performance, superior voltage clamping and ultra-low on-state resistance (RDSon). PMV50UPE,215 is a high voltage device in a new vertical styleSMD package, allowingfor greater current load capability, improved device robustness and as a result superior power handling capability. PMV50UPE,215 is widely used in Motor Drive, Uninterruptible Power Supply, Photovoltaic Inverter, Industrial Power and Lighting applications.
The PMV50UPE,215 is configured as an Enhancement Mode Power MOSFET, and includes features such as low gate charge (Qg), and ultra-low on-state resistance (RDSon). An increasein operating temperature will increase the value ofRDSonconsiderably, as a result PMV50UPE,215 can be used upto 150℃. The PMV50UPE,215 also supports bothcurrent sensing andfault conditionsusing low on-state resistance.
The PMV50UPE,215 MOSFET structure is designed to provide superiorperformancein light load and high temperature applications. These devices have been designed with advanced shift intechnology,which enables them to have low turn-on time, fast switching speeds and low switching loss. The PMV50UPE,215 also includes a superior protection features, which ensures protection to the device
The working principle of a PMV50UPE,215 device is as follows, when a MOSFET is turned on, the gate voltage applied to the gate of the transistor causes a channel to form between the source and the drain region. This channel allows the flow of electrons or electrical current to pass through. The resistance of the transistor can be varied by varying the voltage applied between the gate and the source terminals. When a certain voltage is reached, the transistor will turn off and no current can pass.
PMV50UPE,215 have a wide range of applications, including Motor Drive, Uninterruptible Power Supply, Photovoltaic Inverter, Industrial Power and Lighting. These applications can benefit from low resistance, fast switching and fault protection of the device. In addition, the superior voltage clamping and high temperature performance make the PMV50UPE,215 an ideal choice for applications such as motor drive, uninterruptible power supply and industrial power.
In conclusion, PMV50UPE,215 is an excellent choice for applications requiring superior switching performance, superior voltage clamping and ultra-low on-state resistance (RDSon). It is available in a new vertical styleSMD package and supports both current sensing and fault conditions. The device provides low gate charge (Qg) and excellent high temperature performance, allowingfor greater current load capability, improved device robustness and superior power handling capability.
The specific data is subject to PDF, and the above content is for reference
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