PMV50XPR

Vgs(th) (Max) @ Id:	900mV @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	TO-236AB (SOT23)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	490mW (Ta), 4.63W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	744pF @ 20V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	12nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	60 mOhm @ 3.6A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	3.6A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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PMV50XPR Application Field and Working Principle

PMV50XPR is a family of silicone field-effect transistors (FETs) developed and produced by the Toshiba Corporation. They are power MOSFETs that are optimized for use in power circuits in a wide range of applications. PMV50XPR transistors offer a low on-resistance and a wide range of I/O voltages, making them a great choice for applications such as DC-DC converters, switching power supplies, and motor control.

Overview of PMV50XPR

PMV50XPR transistors are designed using the latest trench MOSFET technology. They feature a low on-resistance and a high level of ESD protection. The devices are available in a wide range of I/O voltages - from 10V to 80V - and can handle gate-source voltages of up to 25V. PMV50XPR transistors are housed in a variety of standard packages, with case sizes ranging from 3.2mm x 3.2mm to 7.3mm x 7.3mm.

Applications of PMV50XPR

PMV50XPR transistors are ideal for use in DC-DC converters, switching power supplies, and motor control applications. They can be used to provide voltage-regulation, energy-efficient power conversion, and overload protection. Additionally, the devices are well-suited for use in telecom and industrial equipment, as well as automotive applications.

Working Principle of PMV50XPR

PMV50XPR transistors are field-effect transistors that are made up of a source, a gate, and a drain. When an external voltage is applied to the gate, a field is generated which affects the current flowing through the transistor. This voltage-dependent current control allows for high-efficiency power conversion.The devices are designed with a low on-resistance, which allows for higher efficiency and lower power losses. When a voltage is applied to the gate, the transistor begins to conduct, allowing current to flow from the source to the drain. As the voltage on the gate increases, the current through the transistor increases as well.

Advantages of PMV50XPR

PMV50XPR transistors offer several advantages over other types of power MOSFETs. They are well-suited for use in DC-DC converters, switching power supplies, and motor control applications due to their low on-resistance and wide range of I/O voltages. Additionally, the devices offer a high level of ESD protection and are available in a wide variety of standard packages. Overall, PMV50XPR transistors provide a reliable and efficient solution for use in a wide range of power applications. They offer low on-resistance and high levels of ESD protection, as well as a wide range of I/O voltages. This makes them the perfect choice for efficient and reliable power conversion.

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