Allicdata Part #: | PMV50UPEVL-ND |
Manufacturer Part#: |
PMV50UPEVL |
Price: | $ 0.10 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET P-CH 20V 3.7A TO236AB |
More Detail: | P-Channel 20V 3.7A (Ta) 500mW (Ta) Surface Mount T... |
DataSheet: | PMV50UPEVL Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.08803 |
Series: | -- |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 66 mOhm @ 3.2A, 4.5V |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15.7nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 24pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-236AB |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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PMV50UPEVL is a type of insulated-gate field-effect transistor (IGFET) that utilizes an insulated gate within its field-effect structure. As a MOSFET, the PMV50UPEVL is semiconductor-based, capable of controlling electrical current through a channel that is pinched off when voltage is applied. This semiconductor-based device works in a wide variety of applications, ranging from motor control to logic design.
The primary benefit of the PMV50UPEVL is its ability to quickly switch current from a low to high level. This fast switching speed enables the device to be used in digital circuits and timing controls, allowing reliable application-specific circuits to be created. In addition, the device features low leakage current, allowing greater efficiency and providing better operation for applications that use low to moderate voltage levels.
The PMV50UPEVL takes advantage of a simpler construction by utilizing two lateral P-type and N-type regions to form the gate. This type of construction not only reduces the size of the device but also contributes to its fast switching speed. In addition, the segmented gate function allows improved power handling capacity and superior tolerance to gate voltage variation.
The PMV50UPEVL works by utilizing an electric field to control the behavior of the current. This electric field is created by the bipolar input gate and the n-type and p-type regions of the output. When the voltage applied to the input increases, the electric field around the n-type and p-type regions of the output increases, resulting in a higher resistance. This higher resistance restricts the current flow, thus controlling the current flow.
The PMV50UPEVL is an excellent choice for use in a variety of applications. It is capable of regulating current flow in load switching and motor driving circuits, providing fast, accurate and efficient operation. Its low leakage current makes it ideal for low-voltage applications. In addition, the device\'s wide voltage operation range allows it to be used in a number of different circuits.
The PMV50UPEVL has a number of advantages over other types of insulated gate field-effect transistors, such as its fast switching speed, decreased size, improved power handling capacity and superior tolerance to gate voltage variation. This makes the device an ideal choice for use in a wide array of applications, from motor control and logic design to low to moderate voltage applications.
The specific data is subject to PDF, and the above content is for reference
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