
Allicdata Part #: | 1727-2317-2-ND |
Manufacturer Part#: |
PMZ200UNEYL |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 30V SOT883 |
More Detail: | N-Channel 30V 1.4A (Ta) 350mW (Ta), 6.25W (Tc) Sur... |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.04671 |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | DFN1006-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 350mW (Ta), 6.25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 89pF @ 15V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 2.7nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 250 mOhm @ 1.4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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FETs and MOSFETs are two important semiconductor devices used in many electronic applications. PMZ200UNEYL is a type of mosfet, which is a power FET (field-effect transistor). In this article, we discuss the application field and working principle of PMZ200UNEYL.
What is a PMZ200UNEYL Transistor?
PMZ200UNEYL is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It is a commonly used power semiconductor, mainly used in audio power amplifiers, power supply and voltage regulator circuitry, battery voltage detection, etc. PMZ200UNEYL is one of the most widely used power MOSFETs, thanks to its high power rating and improved features.
The Application Field of PMZ200UNEYL Transistor
The PMZ200UNEYL power MOSFET is used in many audio amplifiers, power supply and voltage regulator circuitry, battery voltage detection systems, motor control applications, as well as converters and AC-DC switch mode power converters, to name a few. It’s also often found in industrial automation and communication systems, especially in applications that require reliable and robust performance. It is a reliable, cost-effective and industry-grade MOSFET solution for a variety of switching, control, and power management applications.
Working Principle of PMZ200UNEYL Transistor
The working principle of the PMZ200UNEYL power MOSFET is based on the MOSFET capabilities of controlling the amount of current passing through the device. It uses an insulated gate and two metallic contacts, called the source and the drain, that are fabricated in a silicon substrate. The insulated gate surrounds the substrate and allows it to control the source-drain current by acting as a valve connecting or disconnecting the circuit. When voltage is applied to the gate, it creates an electric field through the substrate, and the source-drain current is controlled accordingly. The PMZ200UNEYL is also capable of fast switching between the on and off states.
Conclusion
As one of the most popular power MOSFETs, PMZ200UNEYL is still relatively new to the market and has proven itself to be an excellent choice for high power applications. It’s a reliable and cost-competitive option for a wide range of applications, such as audio amplifiers, power supply and voltage regulator circuitry, battery voltage detection, motor control, industrial automation, and communication systems. It’s also capable of fast switching between on and off states and is a great choice for a variety of switching, control, and power management tasks.
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