PMZ250UN,315 Allicdata Electronics
Allicdata Part #:

568-6775-2-ND

Manufacturer Part#:

PMZ250UN,315

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 20V 2.28A SOT883
More Detail: N-Channel 20V 2.28A (Tc) 2.5W (Tc) Surface Mount D...
DataSheet: PMZ250UN,315 datasheetPMZ250UN,315 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 950mV @ 250µA
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 20V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 0.89nC @ 4.5V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 300 mOhm @ 200mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.28A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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PMZ250UN and 315 are both types of field-effect transistors (FET). FETs are transistors that operate based on an electric field, rather than a current. In particular, PMZ250UN and 315 are metal-oxide-semiconductor field-effect transistors (MOSFETs). MOSFETs are unipolar transistors, meaning that they only have one gate terminal. FETs, including MOSFETs, are most commonly used for amplifying and switching applications.

The PMZ250UN is a high-performance N-channel MOSFET with a low threshold voltage. It has a maximum drain-source voltage of 75 V and a drain-source current of 2500 mA. The PMZ250UN is used in power supplies, audio amplifiers, and other applications that require high switches.

The 315 is an N-channel enhancement-mode vertical DMOS FET transistors, with a low gate-source threshold voltage and a current rating of 2A. The 315 has a maximum drain-source voltage of 60 V and is used in power supplies and motor control applications.

The working principle of a MOSFET is based on the relationship between voltage, current, and resistance. The transistor has three terminals, known as the drain, source, and gate. A voltage applied to the gate creates an electric field at the input and this electric field modulates the current passing through the source and drain. At the source, it modulates the electron flow between the source and the drain. This electron flow is what is commonly referred to as the current. The current passing through the transistor is proportional to the voltage applied to the gate.

The PMZ250UN and 315 transistors are designed for use in a variety of applications such as power supplies, motor control, audio amplifiers and digital signal processing. The PMZ250UN can be used in applications that require high switching speeds. The 315 is particularly well suited for motor control applications due to its low gate-source threshold voltage and its current rating of 2A. The PMZ250UN and 315 are also used in switching and amplifying circuits, as they both offer excellent performance.

In summary, PMZ250UN and 315 are both N-channel MOSFETs, specifically designed for different applications. The PMZ250UN is a high-performance N-channel MOSFET with a low threshold voltage, and is used for high speed switching applications. The 315 is an N-channel enhancement-mode vertical DMOS FET transistor, with a low gate-source threshold voltage and a current rating of 2A, and is used in motor control applications. Both transistors work on the principle of creating an electric field that modulates the electron flow between the source and the drain.

The specific data is subject to PDF, and the above content is for reference

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