
Allicdata Part #: | 1727-2318-2-ND |
Manufacturer Part#: |
PMZ290UNEYL |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 20V 1A |
More Detail: | N-Channel 20V 1A (Ta) 350mW (Ta), 5.43W (Tc) Surfa... |
DataSheet: | ![]() |
Quantity: | 10000 |
10000 +: | $ 0.03883 |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Package / Case: | SC-101, SOT-883 |
Supplier Device Package: | DFN1006-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 350mW (Ta), 5.43W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 83pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 0.68nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 500mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 1A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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PMZ290UNEYL is a product type of field effect transistor. It is classified as single MOSFET transistor. This device is based on passivated MOS structure technology to develop integrated circuits, in order to achieve great integration, high-speed operation and excellent reliability. This device is able to suppress surge current and is widely used in various fields, such as high-speed switching and power amplifier.
The working principle of PMZ290UNEYL is relatively simple. It consists of an insulated N-channel MOSFET, in which an N-channel is formed in a variety of ways, such as epitaxial growth or ion implantation, through a gate dielectric layer. The gate terminal can be made of metal, polysilicon, or any other suitable material. An N type drain is also arranged in this MOSFET. When a positive voltage is applied to the gate terminal, a conduction channel is induced between source and drain, and thereby electrical current will be allowed to flow through. This is mainly used for power switching in various applications, such as power supply, communications, audio amplifiers and automotive electronics.
Due to its features, PMZ290UNEYL transistor can be used in many applications, such as high frequency signal modulation, remote control signal amplification, telephone and digital data transmission, communications equipment, voltage regulators and power amplifiers. It is also suitable for automotive and industrial applications, such as switching power supplies, DC-DC converters, high-frequency power amplifiers and power switching. Furthermore, due to its excellent withstand voltage characteristics, PMZ290UNEYL can be used in high-voltage, high-current applications, such as lighting systems and motor drives.
The PMZ290UNEYL transistor also has several advantages that have made it a coveted device among engineers and designers. First, this transistor includes a soft-shutdown feature that prevents unexpected surges, while allowing a controlled start-up. This eliminates the need to include additional protective circuits and thus simplifies the design of the system. Second, the junction temperature of this device is relatively low, which allows it to work in harsher environments than other transistors. Third, this device uses an integrated self-protection circuit (SPC) to protect itself from damage due to static electricity.
In summary, PMZ290UNEYL is a high performance field effect transistor, which is used in a wide range of electronic applications as a power switching device. It has some excellent features which make it a preferred choice for engineers and designers, such as low junction temperature, soft-shutdown feature, and integrated self-protection circuit. These features make the PMZ290UNEYL a reliable, safe and efficient power switching device.
The specific data is subject to PDF, and the above content is for reference
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