PN5138 Allicdata Electronics
Allicdata Part #:

PN5138-ND

Manufacturer Part#:

PN5138

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 30V 0.5A TO-92
More Detail: Bipolar (BJT) Transistor PNP 30V 500mA 625mW Thro...
DataSheet: PN5138 datasheetPN5138 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Power - Max: 625mW
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Description

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The PN5138 is a type of single bipolar junction transistor (BJT). It is commonly used in applications where a low-noise, high-speed switch is required, such as mobile phone switching systems, optical networks, and electronic switching systems. The PN5138 is a general-purpose BJT with a relatively low collector-emitter saturation voltage and a large range of collector-emitter currents that span from 2mA to 200mA. Due to its small size and low-noise characteristics, the PN5138 is well-suited for numerous applications that demand small signals in minimal space.

The PN5138 consists of three terminals: the base, collector, and emitter. The PN5138 is a type of NPN transistor, which means that electrons flow from the emitter to the collector when the base is forward biased. The base-collector junction is forward biased when a negative potential is applied to the base, thus allowing electrons to flow through the junction and into the collector. This creates an “on” state, where a current can flow through the collector. The collector-emitter junction is reverse biased when the base is at zero potential, which prevents current from flowing through the transistor and creates an “off” state.

In order to understand the working principles of the PN5138, we must first look at its basic structure. The PN5138 consists of three layers: the base, collector, and emitter. The base is typically composed of a semiconducting material and acts as a control terminal for the transistor. The collector and emitter are composed of different semiconductor materials, and electrons are allowed to flow between the two when the base is properly biased with a voltage. When the transistor is in the “on” state, current will flow in the collector-emitter direction. Conversely, when the transistor is in the “off” state, no current will flow in the collector-emitter direction.

To use the PN5138 in an application, it is first necessary to understand the basics of BJT transistor biasing. The basic idea is to apply a voltage between the base and emitter in order to bring the base-emitter junction into forward bias, allowing electrons to flow through the transistor. The voltage between the collector and emitter, known as the “collector-emitter voltage”, is also important to consider. This should usually be kept at a low value in order to minimize power consumption.

The PN5138 is used in a wide range of applications, including telephone switching systems, optical networks, television sets, and amplified audio. It can also be used in high-speed radio-frequency switching applications. The PN5138 is also well-suited for use as a Schmitt trigger due to its high speed and low-noise characteristics. A Schmitt trigger is a type of electronic circuit which is used to convert a non-linear input signal into a digital output signal.

The PN5138 is a popular choice for high-speed switching applications due to its low collector-emitter saturation voltage and wide range of collector-emitter currents. It is also a good choice for low-noise amplifiers and other types of analog-to-digital converters. Its small size makes it ideal for applications where small signals need to be routed in minimal space.

A number of PN5138-specific parameters must be taken into account in order to successfully use the transistor in any application. These include the base-emitter voltage, the collector-emitter voltage, the collector-base voltage, the collector current, and the transition frequencies. Careful consideration must be given to these parameters as improper settings may result in device failure or inaccurate operation.

In conclusion, the PN5138 is a type of single bipolar junction transistor (BJT) which is commonly used in applications where low-noise, high-speed switching is required. Its features include a low collector-emitter saturation voltage, high-speed operation, and a wide range of collector-emitter currents. The PN5138 can be used in high-speed switching applications, low-noise amplifiers, and other types of analog-to-digital converters. It is important to take into account the PN5138-specific parameters when using the transistor in any application.

The specific data is subject to PDF, and the above content is for reference

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