PTAC210802FC-V1-R0

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The PTAC210802FC-V1-R0 is a Field-Effect Transistor (FET) designed and manufactured by the company PTAC. The device is designed for applications in the RF (Radio Frequency) range, often used in a variety of components that require very high frequency operation. This article will discuss the application field and working principle of the PTAC210802FC-V1-R0.

Description

The PTAC210802FC-V1-R0 is a single-gate, N-type FET that is capable of operating over a wide voltage range of -20V to +20V. The maximum drain-to-source current is 1.8A and the power handling capacity is 150W. The device is available in an 8-pin, small outline, surface-mount package that facilitates ease of use. The device features a low-noise and high-efficiency design, making it an ideal choice for applications that require an extremely low-noise operation over a wide frequency range.

Application Field

The PTAC210802FC-V1-R0 is an ideal choice for applications in the RF range, where wide-band frequency operation is required. It is designed for use in a variety of components such as high-frequency power amplifiers, oscillators, and attenuators. The device is also suitable for use in low-noise communications systems, microwave tuners, and wireless systems.

The device is also ideal for use in applications such as antenna switches, mixers and converters, modulation/demodulation systems, IF amplifiers, and wide-band filters. In addition, it is suitable for use in synthesisers, measuring instruments, and data detectors.

Working Principle

The PTAC210802FC-V1-R0 utilizes a Field-Effect Transistor (FET) operating in the RF range. The source of the device is connected to its drain connections, which also provides a high-impedance circuit. The gate connection is then used to control the flow of current from the drain to the source by allowing electrons to flow through the gate oxide barrier oxide when a positive charge is applied.

The device features an efficient current handling design due to its low internal capacitance. This efficient design allows for the device to achieve high-frequency operation with minimal distortion. As the device is designed for RF range operation, it utilizes a number of different elements, such as inductors, capacitors, and resistors, to allow it to operate in the RF range.

Conclusion

The PTAC210802FC-V1-R0 is a Field-Effect Transistor (FET) designed and manufactured by the company PTAC. The device is designed for applications in the RF (Radio Frequency) range, often used in a variety of components that require very high frequency operation. The device features a low-noise and high-efficiency design, making it an ideal choice for applications that require an extremely low-noise operation over a wide frequency range. The device utilizes a Field-Effect Transistor (FET) operating in the RF range, where its gate connection is used to control the flow of current from the drain to the source. The device is suitable for use in a number of RF-related applications such as high-frequency power amplifiers, oscillators, and attenuators, as well as low-noise communications systems, microwave tuners, and wireless systems.

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