Allicdata Part #: | PTAC260302FC-V1-R250-ND |
Manufacturer Part#: |
PTAC260302FC-V1-R250 |
Price: | $ 38.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Cree/Wolfspeed |
Short Description: | IC AMP RF LDMOS |
More Detail: | RF Mosfet |
DataSheet: | PTAC260302FC-V1-R250 Datasheet/PDF |
Quantity: | 1000 |
250 +: | $ 34.76830 |
Series: | * |
Part Status: | Active |
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The PTAC260302FC-V1-R250 is a class of device in the category of transistors and field effect transistors. It is in the RF (radio frequency) class, and is used in high-frequency applications such as broadcasting, satellite communications, and frequency control systems. It is a high-frequency power MOSFET for use in the radio wave range.
The PTAC260302FC-V1-R250 offers superior performance for high-frequency radio waves because of its small size and low on-resistance. The size of the device and its low on-resistance allow it to operate with a lower amount of power, making it an efficient and economical device. Additionally, its ESD (electrostatic discharge) protection is superior to other MOSFETs in its class, allowing it to withstand heavier electrostatic shock.
The principle of operation of the PTAC260302FC-V1-R250 is based on the motion of charge carriers in the channel region of a MOSFET. A MOSFET consists of two layers of semiconductor material separated by a thin insulating layer. A gate voltage is applied between the source and drain of the MOSFET to induce a flow of electrons or holes. The number of electrons or holes that move depends on the gate voltage, and the current is proportional to the product of the gate voltage and the number of carriers.
The PTAC260302FC-V1-R250 has a variety of possible applications. Due to its superior performance, it is ideal for use in high-frequency radio wave applications such as satellite communications, broadcasting, and frequency control systems. It is also ideal for use in analog and digital circuits, such as switching and signal conditioning applications.
The PTAC260302FC-V1-R250 is a high-frequency power MOSFET designed for use in the radio wave range. Its small size and low on-resistance allow it to operate efficiently and economically with a lower amount of power consumed. Additionally, its superior ESD protection allows it to withstand higher levels of electrostatic shock. With its wide range of possible applications, the PTAC260302FC-V1-R250 is an ideal choice for use in high-frequency radio wave applications, analog and digital switching and signal conditioning, and other applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
PTAC210802FC-V1-R250 | Cree/Wolfspe... | 34.01 $ | 1000 | IC AMP RF LDMOSRF Mosfet |
PTAC260302FC-V1-R250 | Cree/Wolfspe... | 38.25 $ | 1000 | IC AMP RF LDMOSRF Mosfet |
PTAC240502FC-V1-R250 | Cree/Wolfspe... | 39.17 $ | 1000 | IC AMP RF LDMOSRF Mosfet |
PTAC260302SCV1R250XTMA1 | Infineon Tec... | 40.26 $ | 1000 | IC AMP RF LDMOSRF Mosfet |
PTAC210802FC-V1-R0 | Cree/Wolfspe... | 40.92 $ | 1000 | IC AMP RF LDMOS H-37248-4... |
PTAC260302FC-V1-R0 | Cree/Wolfspe... | 46.01 $ | 1000 | IC AMP RF LDMOS H-37248H-... |
PTAC240502FC-V1-R0 | Cree/Wolfspe... | 47.12 $ | 1000 | IC AMP RF LDMOS H-37248-4... |
PTAC210802FCV1XWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC AMP RF LDMOSRF Mosfet |
PTAC240502FCV1XWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC AMP RF LDMOSRF Mosfet |
PTAC260302FCV1XWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC AMP RF LDMOSRF Mosfet |
PTAC260302SCV1R250XTMA2 | Infineon Tec... | 0.0 $ | 1000 | IC AMP RF LDMOS H-37248H-... |
PTAC260302SCV1S250XTMA1 | Infineon Tec... | 0.0 $ | 1000 | IC AMP RF LDMOS H-37248H-... |
PTAC260302SCV1XWSA1 | Infineon Tec... | 0.0 $ | 1000 | IC AMP RF LDMOS H-37248-4... |
PTAC260302SCV1XWSA2 | Infineon Tec... | 0.0 $ | 1000 | IC AMP RF LDMOS H-37248H-... |
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