PTAC240502FCV1XWSA1 Allicdata Electronics
Allicdata Part #:

PTAC240502FCV1XWSA1-ND

Manufacturer Part#:

PTAC240502FCV1XWSA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IC AMP RF LDMOS
More Detail: RF Mosfet
DataSheet: PTAC240502FCV1XWSA1 datasheetPTAC240502FCV1XWSA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Discontinued at Digi-Key
Description

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The PTAC240502FCV1XWSA1 is a commonly used transistor device in the field of RF applications. This single package, dual transistor, RF MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a surface mount device with a 5-pin leadless design. It is designed for single-ended applications such as amplifiers, mixers, and switches, and is particularly well-suited for operation in the 1.8GHz - 6.0GHz frequency range. The PTAC240502FCV1XWSA1 is very efficient in terms of power and temperature dissipation, making it an ideal solution for a variety of RF projects.

The PTAC240502FCV1XWSA1 has two distinct N-Channel MOSFET transistors, each with its own pin configuration. The device also has a single block of solder bonding pads and contacts on the bottom of the package. The main purpose of these contacts is to make it easier to connect external circuitry.

The PTAC240502FCV1XWSA1 is a simple RF MOSFET device and its working principle is based on the fact that when a gate voltage is applied to the gate of the MOSFET, it creates a conductive path between the drain and the source. The gate-source voltage (Vgs) determines the conductivity of the channel and this, in turn, affects the current flowing from one terminal to the other. The PTAC240502FCV1XWSA1 is a high-performance RF MOSFET with very low turn-on and turn-off times and an overload rating of 300V.

One of the biggest advantages of the PTAC240502FCV1XWSA1 is its low input capacitance, which makes it ideal for high frequency applications. Additionally, it has very low operating and gate leakage currents, and it is highly robust and reliable. It is also capable of operating in excess of 40V and at frequencies of up to 10GHz.

The PTAC240502FCV1XWSA1 has a wide range of uses in the field of RF circuits. It can be used as an amplifier, switch, mixer, or as a power amplifier in various wireless systems such as cell phones and Wi-Fi devices. Furthermore, it can also be used for applications such as impedance matched filters, oscillators, and for RF signal detection.

In conclusion, the PTAC240502FCV1XWSA1 is an efficient and reliable RF MOSFET transistor with a wide range of useful application fields in the field of RF. Its low power consumption, low input capacitance, and excellent quality make it an ideal device for a variety of RF projects. With its excellent performance, it is sure to be a great addition to any RF circuit.

The specific data is subject to PDF, and the above content is for reference

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