PTAC260302SCV1R250XTMA1 Allicdata Electronics
Allicdata Part #:

PTAC260302SCV1R250XTMA1-ND

Manufacturer Part#:

PTAC260302SCV1R250XTMA1

Price: $ 40.26
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IC AMP RF LDMOS
More Detail: RF Mosfet
DataSheet: PTAC260302SCV1R250XTMA1 datasheetPTAC260302SCV1R250XTMA1 Datasheet/PDF
Quantity: 1000
250 +: $ 36.59950
Stock 1000Can Ship Immediately
$ 40.26
Specifications
Series: *
Part Status: Last Time Buy
Description

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The PTAC260302SCV1R250XTMA1 is a high-performance RF transistors that is used in all major wireless and cellular applications. With its low thermal resistance, low power dissipation, and good linearity, this device is becoming the transistor of choice for RF applications.

A transistor works by controlling the flow of current between two terminals. Transistors can be divided into two primary categories: junction field-effect transistors (JFETs) and metal-oxide-semiconductor field-effect transistors (MOSFETs). MOSFETs are often used in RF applications because of their ability to handle high frequencies, low noise, and power efficiency. The PTAC260302SCV1R250XTMA1 is a MOSFET.

The PTAC260302SCV1R250XTMA1 is a wideband, high-power, high-performance RF transistor. It is a high power, high linearity MOSFET and is suitable for cellular infrastructure theory, handset applications, and other RF transceiver applications. It has a wide operating frequency range of 835-2700 MHz, with a maximum power output of 300W at 25°C case temperature.

The PTAC260302SCV1R250XTMA1 is well-suited for both linear and saturated applications. It has very low thermal resistance and low power dissipation. The device also has low gate and drain-source capacitances, allowing for better signal integrity and transmission. This allows the PTAC260302SCV1R250XTMA1 to be used in wideband amplifiers and signal splitters, as well as in components used for wireless systems and cellular networks.

The PTAC260302SCV1R250XTMA1 offers excellent linearity and noise performance. It also has a very low operating current as well as low VCE(sat) and VGS(off). This MOSFET is also very reliable, with a lifetime of over 10 years.

The PTAC260302SCV1R250XTMA1 is a highly versatile device that can be used in multiple applications. Its excellent linearity and noise performance makes it ideal for a wide range of wireless and cellular applications, while its low power dissipation and thermal resistance make it suitable for use in systems requiring high efficiency. This device is also suitable for signal amplification and signal splitting applications.

In summary, the PTAC260302SCV1R250XTMA1 is a highly reliable, linear, and powerful RF transistor that is suitable for use in a wide range of applications. Its low power dissipation and excellent linearity makes it an ideal choice for use in signal splitting and wireless systems. Additionally, its low thermal resistance makes it suitable for use in devices requiring high efficiency. Therefore, the PTAC260302SCV1R250XTMA1 is the ideal device for all major wireless and cellular applications.

The specific data is subject to PDF, and the above content is for reference

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