PTAC260302SCV1R250XTMA2 Allicdata Electronics
Allicdata Part #:

PTAC260302SCV1R250XTMA2-ND

Manufacturer Part#:

PTAC260302SCV1R250XTMA2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IC AMP RF LDMOS H-37248H-4
More Detail: RF Mosfet
DataSheet: PTAC260302SCV1R250XTMA2 datasheetPTAC260302SCV1R250XTMA2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
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Part Status: Last Time Buy
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Description

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PTAC260302SCV1R250XTMA2 is a trendsetting product that is used in the RF field due to its pioneering features. The PTAC260312SCV1R250XTMA2 is a MOSFET transistor with a constant gain value (G) of eight, a typical capacitance at six volts (Ciss) of 25pF, an RDS(on) of 30mΩ, an idss of 225mA, and a rated voltage of minus 250V. It is an 8-pin transistor in an XMA2 package. The PTAC260302SCV1R250XTMA2 has a unique gate-source voltage that ranges from 2V to 6V. This is advantageous over other transistors since it can control the current gain and switching of the device from low level to high levels without any distortions.

The working principle of the PTAC260312SCV1R250XTMA2 is based on the positive temperature coefficient of resistance or the PTCR of the device. PTCR is when the resistance of the device is increased as the temperature of the device increases. The PTAC260312SCV1R250XTMA2 uses the same principle to limit the flow of current in the device and to improve the switching performance. This helps to protect the device from high power surges and also prevents it from generating heat. Additionally, the PTCR of the device enables it to minimize the effect of thermal runaway.

The PTAC260312SCV1R250XTMA2 is used in a wide range of applications within the RF field. These include broadband amplifiers, wireless audio systems, active antenna systems, adaptive beamforming systems, and more. Specifically, the PTAC260312SCV1R250XTMA2 is used in mobile communication systems as an amplifier or as a driver for multiple antennas and find use in smart homes, indoor IoT, and 5G applications. The integrated RDS(on) and germanium doping of the device enhance the performance of this MOSFET transistor, thereby making it a perfect fit for such high-speed and low noise applications.

The PTAC260312SCV1R250XTMA2 is known for its energy efficiency and excellent switching performance. It is also known for its robustness and reliability, making it an all-season option for RF applications. Finally, its cost-effectiveness also makes it an attractive choice amongst consumers. All in all, the PTAC260302SCV1R250XTMA2 is an excellent MOSFET transistor with a versatile application field and reliable working principle.

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