PUMD2,115 Discrete Semiconductor Products

PUMD2,115 is a type of pre-biased array transistors manufactured by STMicroelectronics. It is a base-case solution specifically designed for applications that require medium-power bipolar junction transistors. The transistors in the package are configured in an array of two emitter-base coupled common-base transistors, each with one dedicated collector electrode.

The PUMD2,115 Pre-Biased Array Transistor offers a robust and cost-effective solution to applications that require low input bias currents, high power gain, and fast response time. It is designed with a low input base-emitter voltage (VBE) of 1.5 V and a low collector-emitter saturation voltage (VCEsat). The maximum collector current (Ic) for PUMD2,115 is 30 mA and the maximum power dissipation (Pd) is 5 Watts. The package also features an ESD protection diode which ensures a safe isolation from the circuit.

PUMD2,115 pre-biased array transistors are designed for a wide variety of medium-power applications such as radio-frequency amplifiers, DC-DC converters, regulators and power management. The transistors are also suitable for use in analog and digital circuits, instrumentation amplifiers and switching control circuits.

The pre-biased array transistors of PUMD2,115 are also ideal for applications with high noise immunity requirements. The transistors are designed with an integrated ESD protection diode, which provides a highly efficient protection against electrostatic discharge and thus allows a reliable and safe operation in aggressive environments.

The working principle of PUMD2,115 Pre-Biased Array Transistor is based on the operation of the bipolar junction transistor (BJT). The BJT consists of three regions, the base, the emitter and the collector, connected by two junctions, a base-emitter junction and a base-collector junction. The base region acts as a control gate, controlling the gate currents flowing through the emitter and collector electrodes. The base-emitter and the base-collector junctions are reverse-biased, preventing the majority carriers from crossing the junctions. This allows the majority carriers to flow near the junctions, allowing the controlled current flow between the emitter and collector.

The pre-biasing of the base-emitter and base-collector junctions in PUMD2,115 makes it possible for the transistors to be switched on and off with minimum time delay. The low input base-emitter voltage and the low collector-emitter saturation voltage of PUMD2,115 allows for low-voltage and low current applications to be powered using these transistors. The integrated ESD protection diode ensures a safe operation in high-noise environments.

PUMD2,115 Pre-Biased Array Transistor is an optimal solution for applications that require fast switching, robust protection and reliable performance in medium-power applications. The transistors are also suitable for use in analog and digital circuits, instrumentation amplifiers and switching control circuits. The integrated ESD protection diode provides reliable protection against electrostatic discharge allowing a safe operation in aggressive environments.