PUMD12,135 Allicdata Electronics
Allicdata Part #:

PUMD12,135-ND

Manufacturer Part#:

PUMD12,135

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN/PNP 6TSSOP
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: PUMD12,135 datasheetPUMD12,135 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02441
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz, 180MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP
Description

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The PUMD12,135 is a pre-biased array of bipolar junction transistors (BJT). This type of transistor array is designed for use as a simple switch element, a linear current controller, a power timer, and an input buffer/driver. The device features a six-pin package configuration, with a single ground terminal and five inputs. The PUMD12,135 can be used in a wide range of applications for linear control, timer control, and logical control.

The PUMD12,135 features a pre-biased architecture, which means that the device is self-biased. This type of self-bias reduces the gate’s gate-to-source voltage, allowing the output current to be tightly controlled. The PUMD12,135 also includes a number of design elements that improve switching speed and reduce switching latency. The device is most commonly used in digital circuits or circuits that require quick switching times.

The PUMD12,135 is a field-effect transistor array, which means that it operates like a conventional single transistor, but with an array of transistors connected in series or in parallel. With this type of transistor array, the output current can be adjusted by varying the voltage applied to the gates. This type of device reduces the amount of power being used, as the current is adjusted depending on the load.

The working principle of the PUMD12,135 is based on the principles of a field-effect transistor. A field-effect transistor is a device that can control a current through one electrode using the electric field generated by another electrode. In this case, the PUMD12,135 is composed of multiple transistors with different gate connections. The voltage applied to the gates controls the current flow through the device.

The PUMD12,135 has a diverse range of applications. It can be used as a simple switch element, to control linear currents, as a power timer, and as an input buffer/driver. The device is most commonly used in digital circuits, computers, and communications systems. The PUMD12,135 is also used in automotive, industrial, and consumer electronic applications.

In summary, the PUMD12,135 is a pre-biased array of bipolar junction transistors (BJT). The device features a pre-biased architecture, which reduces gate-to-source voltage and improves switching speed. The PUMD12,135 is commonly used in digital circuits and communications systems and can be used as a simple switch element, a linear current controller, a power timer, and an input buffer/driver.

The specific data is subject to PDF, and the above content is for reference

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