PUMD12/DG/B3,115 Allicdata Electronics
Allicdata Part #:

PUMD12/DG/B3,115-ND

Manufacturer Part#:

PUMD12/DG/B3,115

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS RET SC-88
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: PUMD12/DG/B3,115 datasheetPUMD12/DG/B3,115 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz, 180MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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The PUMD12/DG/B3,115 is a type of transistor that belongs to the family of bipolar junction transistors (BJT) and is classified as pre-biased arrays. A pre-biased array is specifically used to produce a current that can pass through two or more parts of a circuit independently and in different directions. This type of transistor is mainly used in the development of high speed switching applications. This particular transistor array is also used in applications such as analog multiplexers, voltage amplifiers, and power amplifiers.

The PUMD12/DG/B3,115 is composed of four elements: a semiconductor, source, gate, and drain. The source is responsible for providing the electrical current, while the gate is what determines the magnitude and direction of the current. The drain is the portion of the transistor that is where the current is ultimately released. The semiconductor provides the electrical energy needed for the transistor to operate.

The working principle of the PUMD12/DG/B3,115 is based on the schottky diode effect. This effect essentially describes the behavior of voltage when a reverse biasing between a negative and positive electric potential is applied. In this case, the negative potential is applied at the source, while the positive potential is applied at the drain. This creates a depletion region or an area where the electric potential significantly decreases and electrons cannot move freely. This creates a potential difference or an electrochemical potential, which will cause current to flow when a small voltage is applied.

The PUMD12/DG/B3,115 is generally utilized for high speed switching applications due to its ability to switch current quickly. This is because the current does not have to travel the entire length of the transistor and the current flow is being confined to the depletion region. This, in turn, enables the transistor to switch quickly and efficiently. This transistor is also used in analog multiplexers, voltage amplifiers, and power amplifiers as it is able to accurately control and regulate current and voltage in these applications.

The PUMD12/DG/B3,115 is a great choice for high speed switching applications as it is reliable and efficient in its operation. Its ability to accurately and quickly control the flow of current enables the device to serve a wide range of applications, such as analog multiplexers, voltage amplifiers, and power amplifiers. This transistor array is also highly cost-effective and provides excellent performance in all these uses.

The specific data is subject to PDF, and the above content is for reference

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