R6006ANX Allicdata Electronics
Allicdata Part #:

R6006ANX-ND

Manufacturer Part#:

R6006ANX

Price: $ 1.59
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 600V 6A TO-220FM
More Detail: N-Channel 600V 6A (Tc) 40W (Tc) Through Hole TO-22...
DataSheet: R6006ANX datasheetR6006ANX Datasheet/PDF
Quantity: 1125
1 +: $ 1.59000
10 +: $ 1.54230
100 +: $ 1.51050
1000 +: $ 1.47870
10000 +: $ 1.43100
Stock 1125Can Ship Immediately
$ 1.59
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FM
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Bulk 
Description

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The R6006ANX is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) with an operating temperature range of -55 to +150 degrees Celsius. It is commonly used in high-power switching circuits as well as in a variety of other applications.

The R6006ANX has a maximum drain current of 11A and a maximum drain-source voltage of 20V. It has a maximum power dissipation of 97mW at 25 degrees Celsius and a breakdown voltage of 24V. It has a Gate-Source voltage of 20V and a Gate-Drain voltage of 20V.

The R6006ANX is manufactured using lithography, which is a process in which semiconductor materials are layered on top of one another in layers of extremely thin layers. This makes the device highly efficient and helps decrease the chance of shorts or other anomalies occurring.

The working principle of an MOSFET is based on the concept of transistors, which are three-terminal electronic devices that are used to control electric current flow and voltage levels. The MOSFET is composed of four layers; the source, gate, drain and body. The source and drain terminals are connected to the body and the gate is connected to the source. When a voltage is applied to the gate terminal, it creates an electric field which forces electrons through the channel, creating an electric current. The magnitude of this current is determined by the voltage applied and the conductivity of the channel.

The R6006ANX is typically used in applications where low impedance, high frequency switching and low noise are desired. It is often found in audio amplifiers, automotive electronics, consumer electronics, computer peripherals and communication systems. It is also common in industrial applications, such as motor control, solar energy and HVAC systems. It is often paired with other MOSFETs, transistors and other active components to create highly efficient and powerful circuits.

The R6006ANX is a highly reliable and efficient MOSFET that is ideal for a variety of applications. It is manufactured using advanced lithography techniques, making it very dependable and able to handle a wide range of power and voltage requirements. Its relatively low impedance makes it well suited for high frequency switching and low-noise environments. Additionally, its wide operating temperature range makes it suitable for a variety of environments. The R6006ANX is a great choice for anyone looking for a reliable, efficient and cost effective means to control electric current flow and voltage levels in circuits.

The specific data is subject to PDF, and the above content is for reference

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