
R6004CNDTL Discrete Semiconductor Products |
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Allicdata Part #: | R6004CNDTLTR-ND |
Manufacturer Part#: |
R6004CNDTL |
Price: | $ 0.70 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 4A CPT |
More Detail: | N-Channel 600V 4A (Ta) 40W (Tc) Surface Mount CPT3 |
DataSheet: | ![]() |
Quantity: | 2500 |
1 +: | $ 0.70000 |
10 +: | $ 0.67900 |
100 +: | $ 0.66500 |
1000 +: | $ 0.65100 |
10000 +: | $ 0.63000 |
Vgs(th) (Max) @ Id: | 4.5V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | CPT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 280pF @ 25V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The R6004CNDTL is a high-power enhancement-mode horizontal MOSFET transistor designed for use in various applications such as automotive and industrial systems. This device has an insulated gate, a source, a drain, and a body terminal. It is most commonly used in automotive and industrial applications where power efficiency is important.
The specified characteristics of a R6004CNDTL are its gate-source voltage, drain-source voltage, drain current, drain-source resistance and other features. These characteristics define the device’s operational limits and therefore have a great impact on device performance. For a R6004CNDTL, the maximum gate-source voltage is ± 10V, the drain-source voltage is 25V, and the maximum drain current is 4A. The typical drain resistance is 2.0 mΩ.
The working principle of the R6004CNDTL is based on the Metal Oxide Field Effect Transistor (MOSFET) technology, where the gate voltage is used to change the resistance of a channel of semiconductor material between the source and the drain. When a gate voltage is applied to the MOSFET, it causes current to flow from the source to the drain through the semiconductor material. This MOSFET circuit is capable of dissipating large amounts of power, resulting in high power-efficiency when compared to its counterparts.
The R6004CNDTL can be used as a switch, a voltage regulator, or a current source for various applications such as automotive and industrial systems. It is used in these systems because it is compact, yet offers high power efficiency. Its power-switching capabilities make it a great choice when high voltage and current levels are necessary. The R6004CNDTL can also be used as an amplifier in audio systems.
In addition, the R6004CNDTL has a number of safety features that ensure its reliability. Its insulated gate prevents short-circuit conditions. It also features a thermal cutoff which protects the device from being damaged due to high-temperature conditions. Its drain-source resistance also ensures that the device operates without any cross-conduction occurring.
The R6004CNDTL is an excellent choice for automotive and industrial applications due to its high power efficiency, safety features, and reliability. It is a versatile MOSFET, capable of being used as a switch, amplifier, or voltage regulator for a wide range of applications. It is a reliable, efficient, and cost-effective solution for these applications.
The specific data is subject to PDF, and the above content is for reference
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