R6009ENJTL Allicdata Electronics

R6009ENJTL Discrete Semiconductor Products

Allicdata Part #:

R6009ENJTLTR-ND

Manufacturer Part#:

R6009ENJTL

Price: $ 0.96
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 600V 9A LPT
More Detail: N-Channel 600V 9A (Tc) 40W (Tc) Surface Mount LPTS...
DataSheet: R6009ENJTL datasheetR6009ENJTL Datasheet/PDF
Quantity: 1000
1000 +: $ 0.87194
Stock 1000Can Ship Immediately
$ 0.96
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: LPTS (D2PAK)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 535 mOhm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The R6009ENJTL is an N-channel enhancement-mode Mosfet which provides a wide range of utilization in various applications. This particular transister type is most commonly used in power switching applications. It is also frequently used in high frequency oscillators, and in many industrial, medical and commercial applications. This Mosfet is able to provide high power performance and reliability, even when subjected to challenging conditions.

The uniqueness of the R6009ENJTL lies in the fact that it is an enhancement-mode Mosfet, which offers numerous advantages to users. The enhance-mode MOSFET facilitates superior frequency rates, with minimal on-state resistance. This significantly reduces power losses and increases the efficiency of a device. Additionally, it consumes less power than other transister types. other key benefits of this type of Mosfet are low gate-to-source voltage levels, and very low operating voltages.

The main working principle behind the R6009ENJTL transisitor is the ability of the enhancement-mode MOSFETs to turn on or off, when a positive or negative gate voltage is applied. When the positive gate voltage is applied, current will flow from the drain to the source. This, in turn, provides an output, which causes the device to turn on. Conversely, when the negative gate voltage is applied, the transistor shuts off, and current will not be allowed to flow from the drain to the source.

Due to the advantages offered by the R6009ENJTL Mosfet, it is used in various commercial and industrial applications. It is often used in the automotive, printing and imaging sectors, in battery charging and power supply systems, and in medical and medical sub-systems. It is also frequently used in voltage regulation, power conditioning and rectification, isolation, and lighting and switching.

The R6009ENJTL transisitor has proven to be an essential and useful component in modern electronics. This type of transister is capable of providing reliable performance, even when subjected to challenging conditions, and is popular due to its low consumption and minimal on-state resistance. It is also highly recommended for its high power performance, and is currently being used in various sectors, including automotive, printing and imaging, medical, and other industrial applications.

The specific data is subject to PDF, and the above content is for reference

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