R6007ENJTL Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The R6007ENJTL is a two-terminal, single-channel, insulated-gate, field-effect transistor (IGFET), most commonly known as a MOSFET. This device is of the N type, meaning that the gate electrode is insulated by a reverse-biased, low-voltage P-type substrate. This transistor is widely used in the communications, automotive, medical and military industries because of its high voltage, low-power and high-temperature operation capabilities. This article explains the application field and working principle of the R6007ENJTL.

The R6007ENJTL can be employed in many different applications, but its primary use is in boost and flyback converters, forward and flyback converters, and H-bridge power switching applications. These circuits convert AC power or DC input power into different forms of electrical outputs, such as an adjustable AC or DC voltage or current, depending on the application needs. This type of transistor is also an ideal choice for driving inductive loads, such as motors, sensors, relays, and other load types. Additionally, the R6007ENJTL can be used in switching, buffering, voltage clamping and regenerative braking circuits due to its high-frequency operation.

The primary function of the R6007ENJTL is to switch electrical current when a voltage is applied between the gate and source terminals. When a sufficient voltage is applied between the gate and source terminals, a conductive channel forms between the source and drain terminals. This allows current to flow between the drain and source terminals via the gate-channel, effectively turning the device into a switch. As the voltage between the gate and source terminals is increased, the source-to-drain current increases. Conversely, when the voltage between the gate and source terminals is decreased, the source-to-drain current decreases.

The voltage at the gate terminal of the R6007ENJTL is critically important in determining the amount of current flow through the device. When the voltage reaches the threshold voltage, or V_th, a channel will form between the source and drain terminals and current will begin to flow. If a voltage higher than V_th is applied between the gate and source terminals, the width of the conductive channel increases, allowing more current to flow through the device. The breakdown voltage, or V_d, is the voltage at which the source-to-drain current is limited. If the voltage between the gate and source terminals is higher than V_d, the device will be unable to support the current and will fail.

In terms of physical size, the R6007ENJTL is relatively small in comparison to other MOSFET devices. It is usually housed in a small, black package with dimensions of 5 x 3.8 x 2.3 millimeters. This small footprint makes it ideal for use in applications where space is at a premium. Additionally, the low power consumption of the device makes it ideal for low-power applications, such as battery-powered applications.

In summary, the R6007ENJTL is a two-terminal, single-channel, insulated-gate, field-effect transistor (IGFET) that is primarily used in boost and flyback circuits, forward and flyback converters and H-bridge power switching applications. It is also suitable for driving inductive loads, as well as for switching, buffering, voltage clamping and regenerative braking circuits. This transistor is capable of high-voltage, low-power and high-temperature operation. The voltage that is applied between the gate and source terminals is critically important in determining the amount of current flow through the device. The device is housed in a small, black package with dimensions of 5x3.8x2.3 millimeters, making it ideal for use in applications where space is at a premium.

The specific data is subject to PDF, and the above content is for reference