Allicdata Part #: | R6009ENX-ND |
Manufacturer Part#: |
R6009ENX |
Price: | $ 2.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 9A TO220 |
More Detail: | N-Channel 600V 9A (Tc) 40W (Tc) Through Hole TO-22... |
DataSheet: | R6009ENX Datasheet/PDF |
Quantity: | 312 |
1 +: | $ 1.99710 |
10 +: | $ 1.80558 |
100 +: | $ 1.45083 |
500 +: | $ 1.12841 |
1000 +: | $ 0.93497 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FM |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 430pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 535 mOhm @ 2.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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The R6009ENX is a single-package type of FET (Field Effect Transistor) which belongs to a specific category of transistor known as MOSFETs (metal oxide semiconductor field-effect transistors). It is an incredibly versatile tool, being able to be used for a wide range of different applications, with varying working principles.
As a FET, this transistor works by controlling the flow of electrons between two electrodes, the drain and the gate. This is done by creating an electric field around the gate, which is then used to regulate the current. The gate is usually electric-ally insulated from the other part of the semiconductor, so that it can be controlled. However, this insulation can be broken down when necessary to allow the free flow of electrons. This process is essentially what allows a MOSFET to operate.
The R6009ENX is an N-type MOSFET, meaning that it is able to conduct current in one direction when voltage is applied to its gate. The device has an incredibly low threshold voltage, meaning that it does not need to be driven at high voltages to start conducting current, allowing for energy savings. In addition, it also offers a much higher input impedance than standard FETs, which makes it much more suitable for high-frequency applications. It also has a very low output capacitance, making it ideal for applications that require high switching speeds.
One of the most important applications of the R6009ENX is as a switching device. It is often used as an interface between different analog and digital circuits and can also be used as an adjustable threshold detector or as an amplifier or driver. Furthermore, the device is often used in power supplies and motor controllers, where its low voltage characteristics are extremely useful. It has also been used in a number of industrial applications due to its robustness and reliability.
Moreover, the R6009ENX is also extremely useful for programmable circuitry. It can be used to set up and control the various stages of a program, allowing for a great deal of flexibility. This can be particularly useful in digital signal processing, where a lot of complex operations are done quickly and precisely. The device is also a reliable choice for frequency generator designs, as it can produce very stable frequencies.
In addition to these applications, the R6009ENX also has many other uses. It can be used to boost current output in any type of circuit, as well as in DC-to-DC converters. The device is also frequently used as a voltage regulator, making it extremely versatile. Finally, it is an ideal choice for controlling a wide range of consumer electronics, such as amplifiers and other audio devices, due to its low power consumption, reliability, and high switching speed.
The specific data is subject to PDF, and the above content is for reference
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