R6009KNJTL Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	5V @ 1mA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	94W (Tc)
FET Feature:	Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds:	540pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	16.5nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	535 mOhm @ 2.8A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	9A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

R6009KNJTL is an Ultra Low Capacitance ESD Protection Diode, which is widely used in the consumer electronics and telecommunications fields. The device can provide protection from electrostatic discharges (ESD) up to ±12 kV, allowing it to be suitable for many consumer product applications where reliability and high ESD protection are required. Additionally, R6009KNJTL has a very low capacitance of 0.4pF, making it an attractive solution for high-speed data applications.

Overview

R6009KNJTL is a dual diode-array designed to protect high-speed data ports from transient overvoltage events. The device is composed of two ESD dual diode slices that provide protection in both directions. The ESD protection is achieved by a combination of low junction capacitance and high clamping voltage rating, making it suitable for ESD events up to ±12kV HBM. It also has a low leakage current of less than 1µA at 4.5V, making it an attractive solution for low-power applications.

R6009KNJTL Application Field and Working Principle

R6009KNJTL is typically used in ESD protection in high-speed data ports and consumer electronics. It offers very low capacitance for high-speed protection, and its dual diode configuration allows for symmetrical protection in both directions. The device has a high breakdown voltage, allowing it to serve as an effective protector from ESD events up to ±12kV. The working principle of the R6009KNJTL can be described in a few simple steps. Once the device is triggered by an ESD event, it will start by changing to its high-voltage state and turning the current path on. This causes the voltage across the device to be clamped to the breakdown voltage. After the ESD event is over, the device returns to its original low-voltage state and the current path is turned off.

Conclusion

R6009KNJTL is a widely used Ultra Low Capacitance ESD Protection Diode that is used in many consumer electronic products and high-speed data applications. The device has a low capacitance of 0.4pF and a high breakdown voltage of ±12kV, allowing it to effectively protect against ESD events. The working principle of the device is based on the changing of its high-voltage state upon ESD detection and the subsequent clamping of the voltage across the device.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description