| Allicdata Part #: | R8008ANX-ND |
| Manufacturer Part#: |
R8008ANX |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | MOSFET N-CH 800V 8A TO-220FM |
| More Detail: | N-Channel 800V 8A (Ta) 50W (Tc) Through Hole TO-22... |
| DataSheet: |  R8008ANX Datasheet/PDF |
| Quantity: | 991 |
Specifications
| Series: | -- |
| Packaging: | Bulk |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 800V |
| Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 1.03 Ohm @ 4A, 10V |
| Vgs(th) (Max) @ Id: | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
| Vgs (Max): | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds: | 1080pF @ 25V |
| FET Feature: | -- |
| Power Dissipation (Max): | 50W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Supplier Device Package: | TO-220FM |
| Package / Case: | TO-220-3 Full Pack |
Description
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R8008ANX is an N-channel power MOSFET which has many applications and works using a specific principle. In this article, we will discuss the application field and working principle of R8008ANX.
Applications of R8008ANX MOSFET
The R8008ANX MOSFET has many applications in both industrial and consumer electronics. It is primarily used for power management in high-efficiency power systems. It can be used in buck and boost converters, Class D switching amplifiers, and AC switches.In addition to these power management applications, R8008ANX can be used for circuit protection, logic level switching, and low-power voltage regulation. It is also used in many automotive applications, including DC-DC voltage converters, DC motors, and vehicle tracking and monitoring systems.Working Principle of R8008ANX MOSFET
R8008ANX is a type of N-channel power MOSFET, which works on the principle of field-effect transistor (FET). In FETs, electric charge carriers (electrons or holes) are responsible for current flow. The FET has three terminals: the source, the gate, and the drain.When a positive voltage is applied to the gate terminal, it attracts electric charge carriers to the gate-source region which forms the source-drain channel. This channel acts as a switch, allowing current to flow from the source to the drain when a lower voltage is applied to the gate.The R8008ANX MOSFET is designed for single-event switching applications. It has an on-resistance of only 0.4 ohms and an off-state capacitance of 97 picofarads. It operates in a vertical DMOS structure and has a low gate charge of 4.4 nanocoulombs to ensure low switching losses. The R8008ANX also has an operating temperature range of -55 to +200 °C.Benefits of R8008ANX MOSFET
The R8008ANX MOSFET has many benefits that make it an attractive choice for various applications. Its vertical DMOS structure eliminates the need for an external heatsink and reduces conduction losses, allowing for higher efficiency. Its low gate charge also helps reduce switching losses, allowing for better power management.The R8008ANX also has a wide operating temperature range, allowing it to be used in different environmental conditions. It is also rated to handle up to 150A of peak current, making it suitable for high-power applications. Finally, its low on-resistance ensures that power loss is kept to a minimum.Conclusion
In conclusion, the R8008ANX is an N-channel power MOSFET designed for single-event switching applications. It has many applications in both industrial and consumer electronics, including power management, circuit protection, and logic level switching. It is designed for high efficiency and low switching losses, and is rated to handle up to 150A of peak current. It also has a wide operating temperature range and does not require an external heatsink for cooling.The specific data is subject to PDF, and the above content is for reference
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