RAL025P01TCR Discrete Semiconductor Products |
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Allicdata Part #: | RAL025P01TCRTR-ND |
Manufacturer Part#: |
RAL025P01TCR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 12V 2.5A TUMT6 |
More Detail: | P-Channel 12V 2.5A (Ta) 320mW (Ta) Surface Mount T... |
DataSheet: | RAL025P01TCR Datasheet/PDF |
Quantity: | 1000 |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 2.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 62 mOhm @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 4.5V |
Vgs (Max): | -8V |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 6V |
FET Feature: | -- |
Power Dissipation (Max): | 320mW (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TUMT6 |
Package / Case: | 6-SMD, Flat Leads |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
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The RAL025P01TCR is a high-frequency single transistor that offers exceptional design flexibility and ease of use. This device is available in a variety of configurations, including single-channel, dual-channel, and three-channel. It is designed for use in a wide range of applications, from low- to high-power and from analogue to digital designs. This transistor can provide users with a significant advantage when it comes to design flexibility, as it is capable of being utilized in a variety of. Additionally, when used in parallel with other transistors, it can provide superior sound quality, as well as increased power and stability.
Application Field
The RAL025P01TCR can be used in a wide range of applications, from low- to high-power and from analogue to digital designs. Common applications include power amplifiers, drivers and receivers, modulation sources, power supplies, and data communications. Additionally, this transistor can be used in a variety of audio and video applications, such as audio amplifiers, audio preamps, crossover networks, and sound processing devices. It can also be used in high-frequency radio communications.
Working Principle
The RAL025P01TCR is a N-channel junction field effect transistor (NFET). This type of transistor is built by using a concentration of electrons, which act as a barrier, located near the gate. When a voltage is applied to the gate via its source terminal, the electrons in the gate create an electrostatic field, which causes the drain terminal to become more conducting, allowing a current to flow from the gate to the drain. By using different gate voltages and gate current levels, the electrical resistance between the source and the drain can be varied, allowing for the device to be used for linear amplification, or for switching applications.
The RAL025P01TCR is also extremely power efficient because of its low drain-source on-resistance and low gate-drain capacitance. These features, combined with its small form factor and high speed capabilities, make it ideal for use in applications that require high levels of power efficiency. This feature also makes it suitable for use in a variety of applications where cost efficiency is a major concern.
Overall, the RAL025P01TCR is an excellent choice of transistor for a variety of design needs. It offers exceptional design flexibility, low power consumption, and high speed capabilities. This device is also capable of being utilized in a wide range of applications, from low- to high-power and from analogue to digital designs. Additionally, the RAL025P01TCR provides superior sound quality, increased power and stability when used in parallel with other transistors.
The specific data is subject to PDF, and the above content is for reference
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