RAL045P01TCR Discrete Semiconductor Products |
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Allicdata Part #: | RAL045P01TCR-ND |
Manufacturer Part#: |
RAL045P01TCR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET P-CH 12V 4.5A TUMT6 |
More Detail: | P-Channel 12V 4.5A (Ta) 1W (Ta) Surface Mount TUMT... |
DataSheet: | RAL045P01TCR Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 4.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 4.5V |
Vgs (Max): | -8V |
Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 6V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TUMT6 |
Package / Case: | 6-SMD, Flat Leads |
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A RAL045P01TCR is an enhancement-mode, n-channel, silicon-based, vertical double-diffused MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for high-speed switching applications in power electronic devices such as chargers, power supplies, and LED lighting. This type of transistor is commonly used to quickly switch power from one device to another.
The RAL045P01TCR is built with a vertical, Drain to Source PN junction to minimize stray capacitance and cross-talk between different transistors. This technology decreases switching losses and improves performance when used in high-speed switching applications. It also makes the RAL045P01TCR an ideal choice for voltage buck converters and other applications requiring high efficiency.
The working principle of the RAL045P01TCR is relatively simple. It consists of an insulated insulated gate which normally blocks current flow between the source and drain terminals. When a control signal is applied to the gate terminal, it causes the transistor to turn on, allowing current to flow freely. The drain current is proportionate to the gate voltage, allowing different levels of current to be switched depending on the signal applied.
The RAL045P01TCR transistor is used in a wide range of power electronics applications including chargers, DC to DC converters, power supplies, and LED lighting systems. It is designed to provide high speed switching and excellent performance in power conversion circuits. The transistor can be used to switch between two power sources, or to control the amount of current being supplied. Other applications include motor control and cooling systems, as well as audio amplification and signal conditioning.
The RAL045P01TCR offers good current handling characteristics and high-level gate protection. It can operate at low gate voltages making it suitable for use in low voltage, low power applications. Its low on-state resistance also helps to reduce losses when switching between different power supplies. Additionally, the RAL045P01TCR has a fast switching time and can be operated at higher temperatures, making it an ideal choice for high temperature applications.
The low cost, high performance, and wide range of applications make the RAL045P01TCR an ideal choice for power electronic applications. Its fast switching capabilities make it great for high-speed applications, while its low resistance and low gate voltage operation make it suitable for low voltage and low power applications. Its high-level gate protection also gives it excellent reliability in challenging environments. All these qualities make the RAL045P01TCR the ideal choice for a variety of power electronics applications.
The specific data is subject to PDF, and the above content is for reference
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