RAL035P01TCR Allicdata Electronics
Allicdata Part #:

RAL035P01TCR-ND

Manufacturer Part#:

RAL035P01TCR

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET P-CH 12V 3.5A TUMT6
More Detail: P-Channel 12V 3.5A (Ta) 1W (Ta) Surface Mount TUMT...
DataSheet: RAL035P01TCR datasheetRAL035P01TCR Datasheet/PDF
Quantity: 1000
3000 +: $ 0.11230
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Rds On (Max) @ Id, Vgs: 42 mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Vgs (Max): -8V
Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 6V
FET Feature: --
Power Dissipation (Max): 1W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TUMT6
Package / Case: 6-SMD, Flat Leads
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Description

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The RAL035P01TCR is an advanced transistor featuring high switching performance, fast switching speed, and wide bandwidth. It is commonly used in applications such as motor control, signal switching, power converters, and high-speed data acquisition. This article will discuss the application field and working principle of the RAL035P01TCR.

Application Field

Due to its fast switching speed, wide bandwidth, and high gain, the RAL035P01TCR is ideal for use in motor control applications. Its high switching speed and low on-resistance make it an excellent choice for controlling the speed and direction of motors. It can be used in both full-bridge and half-bridge designs for different motor control applications.

The RAL035P01TCR is also commonly used in signal switching applications. Its low on-resistance and high output impedance make it an ideal device for routing analog and digital signals. It can be used to route digital or analog signals with minimal interference, allowing for precise signal switching with minimal losses.

The RAL035P01TCR is also used in power converter applications. Its fast switching speed, low on-resistance, and high gain make it an excellent choice for power conversion. It can be used in designs such as converter circuits, rectifier circuits, AC/DC converters, and surge protectors to convert AC power to DC power with minimal losses.

Finally, the RAL035P01TCR is used in high-speed data acquisition applications. Its low on-resistance and high switching speed make it an ideal device for accurately capturing data at high speeds. It can be used in a variety of data acquisition applications where precise and reliable data is required.

Working Principle

The RAL035P01TCR is an N-channel MOSFET which operates on the principle of a field-effect transistor. The gate terminal is responsible for controlling the flow of electrons between the source and drain terminals. When a bias voltage is applied to the gate terminal, it creates an electric field which attracts electrons towards the gate. This causes a change in the source-drain current, allowing for the transistor to be used as a switch.

The RAL035P01TCR has a high on-resistance, allowing for a low source-drain current when the gate bias is low. This results in a low power dissipation and less heat generation. The RAL035P01TCR also has a high switching speed, allowing for precise and accurate signal control. Its wide bandwidth allows for excellent switching performance and is ideal for applications where high-speed operation is required.

Conclusion

In summary, the RAL035P01TCR is an advanced transistor featuring high switching performance, fast switching speed, and wide bandwidth. Its low on-resistance and high switching speed make it an ideal device for a variety of applications including motor control, signal switching, power converters, and high-speed data acquisition. Its field-effect transistor design allows for precise and reliable operation with minimal losses.

The specific data is subject to PDF, and the above content is for reference

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