RD3H045SPTL1 Allicdata Electronics

RD3H045SPTL1 Discrete Semiconductor Products

Allicdata Part #:

RD3H045SPTL1TR-ND

Manufacturer Part#:

RD3H045SPTL1

Price: $ 0.33
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: PCH -45V -4.5A POWER MOSFET
More Detail: P-Channel 45V 4.5A (Ta) 15W (Tc) Surface Mount TO-...
DataSheet: RD3H045SPTL1 datasheetRD3H045SPTL1 Datasheet/PDF
Quantity: 2500
2500 +: $ 0.29435
Stock 2500Can Ship Immediately
$ 0.33
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 15W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 155 mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 45V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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RD3H045SPTL1 is a 3-ampere, 45-volt surface mount P-Channel MOSFET belonging to the Single type of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). This component is one of the most widely used types of FETs (Field Effect Transistors) due to its ability to work as an effective switch at relatively low voltages and low current consumption. The RD3H045SPTL1 is intended for general purpose use, with no limitations on the application field.

This component offers advantages such as low voltage and current consumption, high durability and reliability, self-protection features and an easy to install surface mount design. In addition, the component operates at a wide temperature range from -40 to +150 degrees Celsius, and is available in a variety of packages.

The RD3H045SPTL1 component is often used in applications requiring the control of high voltages and currents such as power supplies, motor controls and HVAC systems. The component can be used as a switch to turn on and off high voltage and/or high current devices. It can also be used as a level shifter or voltage regulator for devices that require a specific voltage level.

The working principle of the RD3H045SPTL1 component is based on the internal structure of a MOSFET. The component is made up of two metal electrodes, the source and the drain, which are separated by an insulating layer of silicon dioxide (SiO2). This insulating layer is referred to as the gate oxide, which forms a barrier between the source and the drain.

When a voltage is applied to the gate, it causes a field effect, which in turn induces a flow of electrons between the source and the drain. When the gate voltage is increased, the electrons are affected by this field and increase the flow of electrons between the source and the drain, resulting in increased current. When the gate voltage is decreased, the field effect reduces the electron flow between the source and the drain, resulting in decreased current.

The RD3H045SPTL1 component is a versatile and reliable solution for applications requiring control of high voltages and currents. The component operates with a wide temperature range and is available in a variety of packages, making it one of the most widely used types of FETs. The component also offers advantages such as low voltage and current consumption, high durability and reliability, self-protection features and an easy to install surface mount design. By understanding the working principles and application fields of the RD3H045SPTL1 component, one can take advantage of its outstanding performance in various applications.

The specific data is subject to PDF, and the above content is for reference

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