RD3H160SPTL1 Discrete Semiconductor Products |
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| Allicdata Part #: | RD3H160SPTL1TR-ND |
| Manufacturer Part#: |
RD3H160SPTL1 |
| Price: | $ 0.48 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ROHM Semiconductor |
| Short Description: | PCH -45V -16A POWER MOSFET |
| More Detail: | P-Channel 45V 16A (Ta) 20W (Tc) Surface Mount TO-2... |
| DataSheet: | RD3H160SPTL1 Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.43585 |
| Vgs(th) (Max) @ Id: | 3V @ 1mA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 20W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 10V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 5V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 50 mOhm @ 16A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Ta) |
| Drain to Source Voltage (Vdss): | 45V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The RD3H160SPTL1 is a logic level single N-channel MOSFET specialty power transistor that is designed to minimize power losses while switching and enhancing the electric characteristics. It is used in applications that require high-speed switching, high current switching, high-voltage power supplies, high-current outputs and a wide bandwidth.
Application Field
The RD3H160SPTL1 is designed to be applied in motor controllers, pulse circuits and various high-current switching circuits. It can operate at switching frequencies up to 30 kHz and is suitable for applications that require high-speed switching and switching of large current in a wide frequency range. It can also be applied in high-voltage power supply applications as it is capable of withstanding high voltage and currents.
It can also be used in power sources with high power requirements, such as lighting equipment, home appliances and industrial equipment. In addition, it is also suitable for use in switching power supplies that require high efficiency and low power consumption.
Working Principle
The RD3H160SPTL1 uses an N-channel insulated gate bipolar transistor (IGBT) as its main component. It is built with a unique gate driver circuit to reduce power loss and improve the on-state performance of the device. It is composed of a transistor gate (G) connected to the gate driver of the device, and a drain (D) connected to the main power line.
When a voltage is applied to the gate (G) of the RD3H160SPTL1, the gate driver activates and a current flows between the gate and the drain (D). This current then creates a magnetic field which pulls electrons from the source (S) to the drain (D), thus enabling the device to conduct current. As a consequence, the device is enabled to switch on and off the main power line.
The RD3H160SPTL1 is designed to provide a high level of switching and operational performances. By using its high current and voltage ratings, it is able to maintain steady levels during the switching operation. In addition, it also has a low switching time, which helps to minimize power losses and reduce the switching noise.
Conclusion
The RD3H160SPTL1 is a specialty transistor that is designed to provide superior switching performance and power saving characteristics. It is suitable for applications that require high-speed switching, high current switching, high-voltage power supplies, high-current outputs and a wide bandwidth. It can be applied in motor controllers, pulse circuits and various high-current switching circuits, as well as in power sources with high power requirements.
The specific data is subject to PDF, and the above content is for reference
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RD3H160SPTL1 Datasheet/PDF