RD3H160SPTL1 Allicdata Electronics

RD3H160SPTL1 Discrete Semiconductor Products

Allicdata Part #:

RD3H160SPTL1TR-ND

Manufacturer Part#:

RD3H160SPTL1

Price: $ 0.48
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: PCH -45V -16A POWER MOSFET
More Detail: P-Channel 45V 16A (Ta) 20W (Tc) Surface Mount TO-2...
DataSheet: RD3H160SPTL1 datasheetRD3H160SPTL1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.43585
Stock 1000Can Ship Immediately
$ 0.48
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 20W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Drain to Source Voltage (Vdss): 45V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The RD3H160SPTL1 is a logic level single N-channel MOSFET specialty power transistor that is designed to minimize power losses while switching and enhancing the electric characteristics. It is used in applications that require high-speed switching, high current switching, high-voltage power supplies, high-current outputs and a wide bandwidth.

Application Field

The RD3H160SPTL1 is designed to be applied in motor controllers, pulse circuits and various high-current switching circuits. It can operate at switching frequencies up to 30 kHz and is suitable for applications that require high-speed switching and switching of large current in a wide frequency range. It can also be applied in high-voltage power supply applications as it is capable of withstanding high voltage and currents.

It can also be used in power sources with high power requirements, such as lighting equipment, home appliances and industrial equipment. In addition, it is also suitable for use in switching power supplies that require high efficiency and low power consumption.

Working Principle

The RD3H160SPTL1 uses an N-channel insulated gate bipolar transistor (IGBT) as its main component. It is built with a unique gate driver circuit to reduce power loss and improve the on-state performance of the device. It is composed of a transistor gate (G) connected to the gate driver of the device, and a drain (D) connected to the main power line.

When a voltage is applied to the gate (G) of the RD3H160SPTL1, the gate driver activates and a current flows between the gate and the drain (D). This current then creates a magnetic field which pulls electrons from the source (S) to the drain (D), thus enabling the device to conduct current. As a consequence, the device is enabled to switch on and off the main power line.

The RD3H160SPTL1 is designed to provide a high level of switching and operational performances. By using its high current and voltage ratings, it is able to maintain steady levels during the switching operation. In addition, it also has a low switching time, which helps to minimize power losses and reduce the switching noise.

Conclusion

The RD3H160SPTL1 is a specialty transistor that is designed to provide superior switching performance and power saving characteristics. It is suitable for applications that require high-speed switching, high current switching, high-voltage power supplies, high-current outputs and a wide bandwidth. It can be applied in motor controllers, pulse circuits and various high-current switching circuits, as well as in power sources with high power requirements.

The specific data is subject to PDF, and the above content is for reference

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