RD3H080SPTL1 Allicdata Electronics
Allicdata Part #:

RD3H080SPTL1TR-ND

Manufacturer Part#:

RD3H080SPTL1

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: PCH -45V -8A POWER MOSFET
More Detail: P-Channel 45V 8A (Ta) 15W (Tc) Surface Mount TO-25...
DataSheet: RD3H080SPTL1 datasheetRD3H080SPTL1 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.32153
Stock 1000Can Ship Immediately
$ 0.35
Specifications
Vgs(th) (Max) @ Id: 3V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 15W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 5V
Series: --
Rds On (Max) @ Id, Vgs: 91 mOhm @ 8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drain to Source Voltage (Vdss): 45V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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RD3H080SPTL1 is an active device that belongs to the family of transistors, and more specifically, to the type of Field-Effect Transistors (FETs) and Metal–Oxide–Semiconductor FETs (MOSFETs). It is a single device.

RD3H080SPTL1 is a high-voltage spin-off device featuring 4-Pin Dual-in-Line (DIP) packaging. It is made in the form of an insulated-gate bipolar transistor and has a volumetric current transfer ratio of 25mA/V. It is rated at 8A, 80V, with a blocking voltage of up to 800V. This device is especially useful for driving high-power demands.

RD3H080SPTL1 can be used in a variety of applications. It is an excellent choice for circuits requiring high power levels and environment robustness. It can be used in automotive electronics, switchmode power supplies, battery chargers, solenoid control circuits, low-voltage AC power control, and other applications that require a high breakdown voltage. It is also suitable for building many kinds of motor control and solar power systems.

The working principle of RD3H080SPTL1 involves two section conductors. The first is a N-channel MOSFET and the second is called a Gate Structure, which is the source and drain of the MOSFET. When the Gate Structure is appropriately charged, electrons are attracted to the MOSFET source area, creating a conducting channel. This, in turn, leads to a conduction path that is controllable by the Gate Structure. In other words, this transistor type enables electrical current to flow when a voltage is applied between the gate and source terminals, and the current flow is proportional to gate-source voltage.

In addition, RD3H080SPTL1 has several features that allow it to be used in a variety of applications. It offers very low leakage current, excellent thermal characteristics and high efficiency. It is also highly reliable and easy to assemble, offering cost-effectiveness. Moreover, it has built-in protection features such as negative impedance protection and continuous short circuit protection.

Overall, RD3H080SPTL1 is an active device designed for use in high-power switching applications such as automotive electronics, switchmode power supplies, battery chargers, solenoid control circuits and low-voltage white goods. It is simple to use and highly reliable, featuring low leakage current, excellent thermal characteristics, and high efficiency. It also offers built-in protection features that make it safe for use in a variety of environments. As such, RD3H080SPTL1 is an ideal choice for many industrial applications.

The specific data is subject to PDF, and the above content is for reference

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