RD3L080SNTL1 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The RD3L080SNTL1 is a robust gate electrode FET (field effect transistor) that is most often used in a variety of electronic applications, from circuit design to space exploration. While there are a variety of types of FETs available, such as JFETs, BJTs, IGBTs, and even MOSFETs, the RD3L080SNTL1 is categorized as a single MOSFET device. It is one of the most commonly found and easy to use devices in the electronics industry.

A MOSFET is an insulated gate field effect transistor, and its main purpose is to serve as a voltage-controlled gate that can be opened and closed. Unlike the BJT, the MOSFET is characterized by a low on-resistance when the gate is activated, allowing it to switch larger loads with less power dissipation. The RD3L080SNTL1 is designed to handle up to 8A of continuous drain current, at a maximum drain-source voltage of 60V.

The RD3L080SNTL1 is most commonly used in circuits where low-power, low-current operation is most critical. It is often used as a power switch in circuits and devices, controlling the activation and deactivation of the device, acting as a voltage regulator to control the voltage supplied to the device. It can also be used as an amplifier or a voltage-controlled switch, having very good signal current transfer characteristics.

The RD3L080SNTL1 is designed to operate over a wide range of temperatures, allowing it to perform in most extreme cases. It can be used in environments ranging from -65°C to 150°C. In addition, the device also has a low gate-threshold voltage, allowing it to be used with low power supplies and so it is ideal for use in designs that must operate at very low voltages.

The device is also generally very tolerant to ESD, making it great for devices where ESD may be an issue. The RD3L080SNTL1 is typically made of the n-channel DMOS process, which is an excellent material for creating fast and reliable field effect transistors.

The working principle behind the RD3L080SNTL1 is fairly simple. When the gate is activated, a current flows through the source, through the drain, and into the substrate. As this current flows, it creates a voltage difference between the source and the drain, known as the drain-to-source voltage. By controlling the gate voltage, the amount of current that passes through the device and the voltage difference between the source and the drain can be adjusted. Furthermore, the amount of current that passes through can be increased by raising the gate voltage, allowing higher power levels to be handled.

This makes the RD3L080SNTL1 perfect for applications where current must be switched quickly, yet with high precision and low power drain. It is an excellent choice for switching from one voltage level to another, as the gate voltage can be used to precisely control the current in the circuit.

The RD3L080SNTL1 is an excellent choice for a wide variety of different applications, from circuit design and space exploration to motor control and HVAC. Its ability to switch current with high precision and low power consumption, over a wide range of temperatures, makes it an excellent choice for applications requiring precise current switching.

The specific data is subject to PDF, and the above content is for reference