RD3L150SNTL1 Discrete Semiconductor Products |
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Allicdata Part #: | RD3L150SNTL1TR-ND |
Manufacturer Part#: |
RD3L150SNTL1 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NCH 60V 15A POWER MOSFET |
More Detail: | N-Channel 60V 15A (Ta) 20W (Tc) Surface Mount TO-2... |
DataSheet: | RD3L150SNTL1 Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.31443 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 930pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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RD3L150SNTL1 Application Field and Working Principle
The RD3L150SNTL1 is a type of field-effect transistor (FET) based on the metal-oxide-semiconductor (MOS) structure. It has a single-gate design, which gives it an advantage over other types of FETs due to its ability to switch more quickly and reliably. This type of transistor is commonly used in a variety of applications that require power handling, such as voltage regulators, power amplifiers, and switching power supplies.
A MOSFET works by allowing current to flow through a channel between its source and drain terminal when a voltage is applied to the gate terminal. By varying the magnitude of the voltage at the gate terminal, the amount of current that passes through the channel can be adjusted. Additionally, the voltage on the drain terminal can be used to control the amount of current flowing through the channel.
The RD3L150SNTL1 is an enhancement-mode MOSFET, meaning it is normally off and needs a positive voltage to be applied to the gate in order to turn it on. It has a maximum gate-source voltage rating of 150 volts and a maximum drain-source voltage rating of 30 volts. It also has a maximum drain current rating of 3 amps and a maximum source-drain current rating of 1.5 amps.
The RD3L150SNTL1 can be used as a switch or an amplifier in a wide variety of applications. It is commonly used in audio amplifiers, voltage regulators, power supplies, automotive audio and video systems, robots, and other types of electronics projects. Its wide range of capabilities makes it a highly versatile and useful component.
The RD3L150SNTL1 is a reliable and efficient MOSFET that can be used in a wide range of applications. Its single-gate design allows for fast switching times, and its highly efficient structure allows for precise current control. With its wide range of capabilities, the RD3L150SNTL1 is a great option for electronics projects.
The specific data is subject to PDF, and the above content is for reference
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