RD3L220SNTL1 Discrete Semiconductor Products |
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Allicdata Part #: | RD3L220SNTL1TR-ND |
Manufacturer Part#: |
RD3L220SNTL1 |
Price: | $ 0.48 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | NCH 60V 22A POWER MOSFET |
More Detail: | N-Channel 60V 22A (Ta) 20W (Tc) Surface Mount TO-2... |
DataSheet: | RD3L220SNTL1 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.44082 |
5000 +: | $ 0.41983 |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1500pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 26 mOhm @ 22A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 22A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RD3L220SNTL1 is a single N-Channel MOSFET that is a member of the RD3 series developed by Shenzhen Rectifier Semiconductor Co., Ltd. RD3 series MOSFETs provide designers and component engineers with an efficient, cost-effective solution for advanced applications. The features of the RD3L220SNTL1 are a 0.22mm pitch pitch, an optimal on-current of 1A, a maximum drain-source resistance of 0.45Ohm, and a breakdown voltage of 40V.
The RD3L220SNTL1 is an excellent choice for power switching applications such as LED lighting, DC/DC converters, and for applications requiring a low-cost, low-voltage MOSFET. It can also be used for motor control applications and for driving logic and interface circuits.
In terms of operations, the MOSFET operates with three distinct modes: Active, cut-off, and linear conduction. In active mode, the transistor passes current from the drain to the source. This is the main purpose of a MOSFET and is used for switching loads. The cut-off mode is used to turn off the current and the linear conduction mode is used for analog switching applications.
The RD3L220SNTL1 MOSFET is a three-terminal device with an N-channel MOSFET. It consists of a gate, drain and source. The drain and source are connected to a current carrying channel while the gate is connected to the gate terminal, which is responsible for controlling the amount of current passing through the channel. The MOSFET operates based on the capacitive coupling between the gate and the channel. When a positive voltage is applied to the gate, it creates a channel between the drain and the source, and electrons flow through the channel from the source to the drain. This creates a current. When a negative voltage is applied to the gate, it creates an depletion region, which is an area where electrons are unable to pass through, and thus no current can flow.
The RD3L220SNTL1 has a maximum drain-source voltage of 40V and a maximum drain current rating of 1A. The drain-source on-resistance is 0.45Ω and the gate threshold voltage is -2V. The RD3L220SNTL1 also has a good capacitance level, which helps in reducing the gate delay, enabling fast switching. It is also capable of operating at a high temperature range. The RD3L220SNTL1 is available in the TO-265 package.
The RD3L220SNTL1 MOSFET is a great tool for designing and building efficient, cost-effective circuits. With its low gate threshold voltage, low on-resistance, and high capacitance levels, it can be used in many power switching applications such as LED lighting, DC/DC converters, motor control applications, and for driving logic and interface circuits. It is also suitable for analog switching applications.
The specific data is subject to PDF, and the above content is for reference
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