RDX045N60FU6 Allicdata Electronics
Allicdata Part #:

RDX045N60FU6-ND

Manufacturer Part#:

RDX045N60FU6

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 600V 4.5A TO220FM
More Detail: N-Channel 600V 4.5A (Ta) 35W (Tc) Through Hole TO-...
DataSheet: RDX045N60FU6 datasheetRDX045N60FU6 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FM
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 2.25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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The RDX045N60FU6 is a single-tube power MOSFET (metal oxide semiconductor field effect transistor), which is used in a variety of applications including power amplifiers, power converters, and high-frequency switching circuits. Its 800V blocking voltage and 45A continuous drain current capabilities make it ideal for high-power applications that require high dynamics and efficiency.

The RDX045N60FU6 also serves as an excellent power switch and can be used in various power converter architectures. For example, the MOSFET can be used as the main switch in a buck converter, which is a type of DC-DC converter that converts a DC input voltage to a lower DC output voltage. Additionally, it can be used as an active switch in a buck-boost converter, which is a type of DC-DC converter that can deliver both positive and negative output voltages.

As a power MOSFET, the RDX045N60FU6 has two main working principles. Firstly, the MOSFET acts as a variable resistor, where its electrical resistance between the source and drain terminals is heavily reliant on the amount of voltage applied to its gate terminal. As the voltage applied to the gate terminal increases, the resistance between the source and drain terminals decreases. This phenomenon is known as drain-induced barrier lowering (DIBL).This working principle makes the MOSFET useful for controlling the amount of current that is allowed to flow through the device. By applying a suitable gate voltage, the current through the MOSFET can be regulated to provide a specific duty cycle, thereby allowing for the device to perform like a switch in many power applications.

Secondly, the MOSFET also works as an amplifier. The MOSFET acts as a voltage amplifier, where it amplifies the gate-to-source voltage by a certain gain. This gain is known as the transconductance and is affected by many factors, including the amount of current through the drain, the temperature of the device, and the amount of capacitance between the source and gate terminals.The RDX045N60FU6 is an excellent choice for power converters and amplifiers, due to its high power, high efficiency, and low cost. Its 800V blocking voltage and 45A continuous drain current capabilities make it ideal for high-power applications that require high dynamics and efficiency. Its superb gate-to-drain charge pump feature also allows for the device to sustain high voltage transients without significantly increasing drain-source voltage. With its excellent characteristics, the RDX045N60FU6 is truly an ideal solution for all power conversion and amplification needs.

The specific data is subject to PDF, and the above content is for reference

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