Allicdata Part #: | RDX080N50FU6-ND |
Manufacturer Part#: |
RDX080N50FU6 |
Price: | $ 2.86 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 500V 8A TO-220FM |
More Detail: | N-Channel 500V 8A (Ta) 40W (Tc) Through Hole TO-22... |
DataSheet: | RDX080N50FU6 Datasheet/PDF |
Quantity: | 801 |
1 +: | $ 2.59560 |
10 +: | $ 2.31840 |
100 +: | $ 1.90109 |
500 +: | $ 1.53942 |
1000 +: | $ 1.29830 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FM |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 920pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Bulk |
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The RDX080N50FU6 is a type of transistor, classified as a field-effect transistor (FET) commonly referred to as a MOSFET. Specifically, it belongs to the type of MOSFETs known as a single FET - this type has one source, one drain, and one gate. As a result, it is well-suited for use in applications that require high current switching and regulate output voltages.
The RDX080N50FU6 MOSFET is commonly used for applications such as motor control, LED lighting, switching power supplies, and audio amplifiers. It is specifically popular for motor control due to its excellent power handling capacity, superior temperature stability and extremely low on-resistance. As a result, it is a great choice for high current and high voltage applications, given its low power losses.
The RDX080N50FU6 is designed with a Strain Gauge technology, allowing it to measure the amount of electrical strain on the drain side of the MOSFET. This allows the MOSFET to monitor and regulate the voltage between the gate and the drain, ensuring that the current flow remains constant and at the desired level. This feature makes the RDX0080N50FU6 ideal for controlling power in applications where consistent output voltages are essential.
The RDX080N50FU6 is a high-performance MOSFET, and as such it has a number of advantages over other types of transistors. First and foremost, it is capable of handling large amounts of current, making it a great choice for high-power applications. Additionally, it also has a very low on-resistance value, which means that it can be used to regulate lower-voltage currents as well. This makes it useful for controlling the output voltage of audio amplifiers and other power-sensitive applications.
In terms of working principle, the RDX080N50FU6 operates according to the familiar field-effect structure in which an electrical field is created between the Drain and the Source, from which current is drawn. When a voltage is applied to the gate, this creates an electrical field which causes current to flow in the device. The on-resistance value of the MOSFET thus determines how much current will flow when a voltage is applied to the gate.
The RDX080N50FU6 is an excellent device for controlling and regulating power in a variety of applications. It has a high current capacity and low on-resistance value, making it great for controlling and regulating high current applications. Additionally, its strain gauge technology helps it monitor and regulate output voltages, ensuring consistent current flow. As such, it is a great choice for applications requiring high current control and regulation.
The specific data is subject to PDF, and the above content is for reference
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