RDX060N60FU6 Allicdata Electronics
Allicdata Part #:

RDX060N60FU6-ND

Manufacturer Part#:

RDX060N60FU6

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: MOSFET N-CH 600V 6A TO-220FM
More Detail: N-Channel 600V 6A (Ta) 40W (Tc) Through Hole TO-22...
DataSheet: RDX060N60FU6 datasheetRDX060N60FU6 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FM
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 40W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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The RDX060N60FU6 is a high-performance, power MOSFET used for a wide range of applications. It is a field-effect transistor (FET) specifically designed to increase efficiency and reduce power loss in power supply and high-voltage applications such as motor control, DC-DC converters, and power switching devices.

The RDX060N60FU6 is a single FET device specifically designed to provide superior performance over a wide range of operating temperatures. It is a power MOSFET that is designed to provide an outstanding combination of fast switching speeds and low on-state resistance. With an extended Drain-Source voltage range of 540V, the RDX060N60FU6 is ideally suited for high-power operation.

The RDX060N60FU6 has a maximum drain-source voltage of 540V and a maximum drain current of 9A. It is rated for a maximum power dissipation of 3.5W at their maximum junction temperature of 150°C. It is also rated for a maximum peak current of 17.9A.

The RDX060N60FU6 MOSFET has an n-channel design which allows for fast switching times between the source and the drain. It is capable of a high transition speed and requires only a small Gate-Source voltage to turn on. This makes the RDX060N60FU6 an ideal choice for applications that require high switching speeds or low power dissipation.

The working principle of the RDX060N60FU6 is based on the concept of the FET transistor. The FET transistor has two main terminals, the source and the drain. The FET transistor also has a gate terminal, which is used to control the current flow between the two main terminals. The operation of the FET transistor is based on the principle of capacitive coupling between the gate terminal and the two main terminals.

When a small amount of voltage is applied to the gate terminal, a capacitive effect is created between the gate and the two main terminals. This capacitive effect allows the current to flow from the source terminal to the drain terminal. The resistance between the two main terminals can be controlled by varying the voltage applied to the gate terminal and thereby controlling the current flow.

The RDX060N60FU6 is a highly reliable device due to its low on-state resistance and its ability to perform at higher junction temperatures and in harsher environments. The RDX060N60FU6 can be used in a wide range of applications such as motor control, DC-DC converters, and power switching devices. It has been designed with superior performance and reliability in mind, making it a preferred choice for applications requiring high-power operation.

The specific data is subject to PDF, and the above content is for reference

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