| Allicdata Part #: | RJL5012DPE-00#J3-ND |
| Manufacturer Part#: |
RJL5012DPE-00#J3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 500V 12A LDPAK |
| More Detail: | N-Channel 500V 12A (Ta) 100W (Tc) Surface Mount 4-... |
| DataSheet: |  RJL5012DPE-00#J3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | SC-83 |
| Supplier Device Package: | 4-LDPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 100W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1050pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 27.8nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 700 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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RJL5012DPE-00#J3 is a single MOSFET transistor produced by the Chinese corporation Renesas. The unique feature of this MOSFET is its high efficiency, which can reach up to 99%. This makes it an ideal option for a range of applications, where energy saving is necessary. Moreover, this device is also capable of providing very low gate capacitance, which improves its performance in high-frequency circuits. Additionally, this device includes a number of features, such as low on-resistance and gate charge as well as logic level shifting capability.
The primary application field for RJL5012DPE-00#J3 is flyback power supplies, digital power supplies, DC/DC converters and other similar systems which require the reliable operation of switching power transistors. Due to its combination of high-efficiency and increased power output, this device is an ideal choice for such systems. Additionally, due to its low gate capacitance, this device is also a great solution for high-frequency circuits. This may range from motor drive applications to switching power supplies.
The working principle of RJL5012DPE-00#J3 is based on the Metal–oxide–semiconductor Field Effect Transistor (MOSFET) device. In this type of transistor, voltage applied to the gate region changes the properties of the channel to create a voltage dependent resistive region. In other words, the application of gate voltage to the channel can cause it to conduct or shut off current flow. By tuning the voltage applied to the gate, one can easily control current flow in the channel. This is the basic principle behind MOSFETs and is the basis by which RJL5012DPE-00#J3 operates.
In conclusion, RJL5012DPE-00#J3 is a single MOSFET transistor designed by the Chinese company Renesas. Its high efficiency and low gate capacitance make it an ideal choice for a range of applications, such as flyback power supplies, digital power supplies, DC/DC converters and other similar systems. The device works on the principle of a MOSFET transistor and its voltage dependent gate controls the current flow in the channel.
The specific data is subject to PDF, and the above content is for reference
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