Allicdata Part #: | RJL5014DPK-00#T0-ND |
Manufacturer Part#: |
RJL5014DPK-00#T0 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 500V 19A TO3P |
More Detail: | N-Channel 500V 19A (Ta) 150W (Tc) Through Hole TO-... |
DataSheet: | RJL5014DPK-00#T0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3P |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1700pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 9.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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RJL5014DPK-00#T0 transistors are a single 28V, PowerePAK® SO-8 package MOSFET. The device is commonly used as a switch in power management, automotive, communications and consumer applications. The MOSFET is an enhancement mode FET that utilizes an N-channel MOS gate structure, which provides a high input impedance level and a low threshold voltage.
RJL5014DPK-00#T0 MOSFETs have a low drain-source on-resistance combined with a fast switching speed for high efficiency in low voltage power management systems, high speed MOSFET switches, DC-DC converters, and high density power circuits. It is suitable for a wide range of applications from 1A switched mode power supplies to logic level I/O switching. The 28V rated drain-source voltage makes the device suitable for various DC/DC OR AC switchmode applications.
RJL5014DPK-00#T0 transistors have the following features:
- 150°C maximum operating temperature
- Absolute Maximum Ratings (VDS 28V , ID 1.7A, Pulsed)
- Very fast switching
- Qualified to AEC Q101
The working principle of RJL5014DPK-00#T0 transistors is based on the principle of electrical conduction between two different semiconductors. This is achieved by charge carriers (electrons and holes) that move across the two layers of the transistor. When a voltage is applied between the two layers, the distribution of charge carriers between them is changed. As a result, a current is established in the circuit and the transistor switches on. The current flow is controlled by the applied gate voltage. When the gate voltage is removed, the transistor switches off and the current flow stops.
In conclusion, the RJL5014DPK-00#T0 is an ideal device for applications such as power management, automotive, communications and consumer applications due to its low on-resistance, fast switching speed, high input impedance and low threshold voltage. The reliable operation at 150°C makes it suitable for a wide range of applications from 1A switched mode power supplies to logic level I/O switching. The 28V rated drain-source voltage makes the device suitable for DC/DC OR AC switchmode applications.
The specific data is subject to PDF, and the above content is for reference
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