| Allicdata Part #: | RJL5020DPK-00#T0-ND |
| Manufacturer Part#: |
RJL5020DPK-00#T0 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Renesas Electronics America |
| Short Description: | MOSFET N-CH 500V 38A TO3P |
| More Detail: | N-Channel 500V 38A (Ta) 200W (Tc) Through Hole TO-... |
| DataSheet: |  RJL5020DPK-00#T0 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4750pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 135 mOhm @ 19A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 38A (Ta) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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RJL5020DPK-00#T0 is a power MOSFET which belongs to the family of transistors, more precisely, to the class of field-effect transistors (FETs). This series is produced by ROHM semiconductor and it is specially designed for efficient power management in consumer and industrial applications that require high performance, low on resistance, and low voltage operation. This power MOSFET is available in a TO-220 package, the most popular package for electronic components.A MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) is a semiconductor device that is used to electronically regulate electric current in a circuit. It is a switch that is activated by the electric field generated by voltage applied to the gate terminal. It utilizes the properties of the Metal Oxide Semiconductor (MOS) to switch between two states, which are on and off. The gate terminal controls the current flowing between the two terminals, the source and drain. When the gate is on, the current flows between the source and drain terminals; when it is off, no current flows. The RJL5020DPK-00#T0 MOSFET is a unidirectional device, which means that it can only conduct electric current in one direction. It has a high drain current rating, up to 6 amps, and low on-resistance, allowing for efficient power management and higher levels of performance. It also has a low drain-source breakdown voltage, allowing for operation at lower input voltages. RJL5020DPK-00#T0 provides robust power management and improved system reliability when used in applications such as TVs, monitors, switches, LED lighting, appliances, and various industrial applications. In addition, it offers overcurrent and overtemperature protection, as well as electrostatic discharge (ESD) protection. The working principle of the RJL5020DPK-00#T0 is based on the field-effect principle. When a voltage is applied to the gate terminal of the MOSFET, it creates an electric field which in turn affects the conductivity of the transistor. This is known as the MOS effect. This electric field changes the concentrations of the mobile charge carriers at the junction of the source and drain, which affects the resistance between the drain and the source. As the electric field increases, the resistance decreases, allowing electric current to flow through it. When the electric field at the gate decreases, the resistance between the source and drain increases, thus blocking the flow of electric current. The RJL5020DPK-00#T0 is a very useful device that can help improve system performance and reliability. With its low on-resistance and low voltage operation, it is an excellent choice for efficient power management in consumer and industrial applications.The specific data is subject to PDF, and the above content is for reference
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