RJU002N06FRAT106 Allicdata Electronics

RJU002N06FRAT106 Discrete Semiconductor Products

Allicdata Part #:

RJU002N06FRAT106TR-ND

Manufacturer Part#:

RJU002N06FRAT106

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: 2.5V DRIVE NCH MOSFET (CORRESPON
More Detail: N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount ...
DataSheet: RJU002N06FRAT106 datasheetRJU002N06FRAT106 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.05506
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 200mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V
Vgs (Max): ±12V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 2.3 Ohm @ 200mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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RJU002N06FRAT106 is a N-channel MOSFET produced by RJPower. It is widely used in power switch applications. Its basic characteristics include low RDS (on) and high VOL (gate threshold voltage) which makes it suitable for use in a variety of applications.

The operating principle of the RJU002N06FRAT106 is based on the charge-based FET (Field Effect Transistor) conduction. The FET is operated by applying a voltage to the gate, which creates a potential barrier between the source and the drain for controlling the electron flow. When a positive voltage is applied to the gate, the potential barrier is increased and electrons flow from the source to the drain. When a negative voltage is applied to the gate, the potential barrier is decreased, and electrons are prevented from flowing from the source to the drain. This is the basic principle of FET operation.

The RJU002N06FRAT106 is an N-Channel MOSFET which is suitable for use in various power switch applications. The device is capable of operating at very low wattage levels, making it an excellent choice for low power applications. It also offers excellent RDS (on) ratings, allowing it to conduct current efficiently at high frequencies. Additionally, it has a low gate threshold voltage, which makes it suitable for use in high voltage applications. This device is also optimal for applications which require power switch operation over a wide range of temperatures.

The RJU002N06FRAT106 is commonly used in applications such as power supplies, motor drivers, lighting, as well as automotive, medical, and consumer electronics. It is used in AC/DC converters, DC/DC converters, and switch-mode power supplies, as well as in battery chargers. It is also used in low voltage DC power supplies and high power audio amplifier circuits. The device is also suitable for use in applications which require high speed switching and it has the capability to handle large current pulses.

The RJU002N06FRAT106 is an ideal choice for various power switch applications. It offers excellent RDS (on) ratings, a low gate threshold voltage, and the ability to operate over a wide range of temperatures, making it an excellent choice for a variety of applications. Its small size makes it well suitable for use in a variety of applications and its low power requirements make it an excellent choice for battery powered devices. The device\'s excellent power handling capability makes it suitable for use in various applications which require power switch operation at low wattage levels.

The specific data is subject to PDF, and the above content is for reference

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