RJU003N03T106 Discrete Semiconductor Products |
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Allicdata Part #: | RJU003N03T106TR-ND |
Manufacturer Part#: |
RJU003N03T106 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 30V 300MA SOT-323 |
More Detail: | N-Channel 30V 300mA (Ta) 200mW (Ta) Surface Mount ... |
DataSheet: | RJU003N03T106 Datasheet/PDF |
Quantity: | 162000 |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 200mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 24pF @ 10V |
Vgs (Max): | ±12V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 300mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 300mA (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The RJU003N03T106 is an n-channel static field effect transistor (FET) with single gate. It uses insulated gate as a current flowing control device and is suitable for applications such as switching and linear amplifying. This type of FET functions in three modes: enhancement mode, depletion mode, and very-high frequency (VHF) mode.
In enhancement mode, the FET has an extremely low and destructive threshold point. This mode is typically used for signal conditioning purposes and for controlling signals from analog inputs. A small voltage change applied to the gate will cause a large change in drain-to-source current as depicted in the image below. Depending on the applied voltage, this mode can provide either high or low amplification.
In depletion mode, the FET functions differently. As the voltage applied to the gate increases, the channel is increasingly filled with electrons, allowing the drain-to-source current to decrease. This mode is commonly used in power management, audio, and other applications requiring dynamic range control.
Finally, in VHF mode the FET works as an efficient low frequency, high power switch for pulsed operation. The FET operates at very high frequencies due to its fast switch-over time and this mode is often used in wireless radio applications.
RJU003N03T106 is widely used in various industries and sectors with some major applications being power supply circuits, power switching, and power management. It is also used in switched mode power supplies (SMPS), DC-DC converters, and other switching power converters in consumer, industrial, automotive, and other environments. The FET is also suitable for low voltage, light electronic load control, high side switching, and current sensing applications.
In essence, the RJU003N03T106 is a powerful tool for minimizing power losses, saving power, increasing performance, and overall providing improved efficiency when used properly. Thanks to its low gate threshold, low leakage current, and low on/off capacitance, it can easily be incorporated into a variety of designs and applications, making it a reliable and robust component for many different operations.
The specific data is subject to PDF, and the above content is for reference
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