Allicdata Part #: | RJU002N06T106TR-ND |
Manufacturer Part#: |
RJU002N06T106 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 60V 200MA SOT-323 |
More Detail: | N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount ... |
DataSheet: | RJU002N06T106 Datasheet/PDF |
Quantity: | 9000 |
Vgs(th) (Max) @ Id: | 1.5V @ 1mA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMT3 |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 200mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 18pF @ 10V |
Vgs (Max): | ±12V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2.3 Ohm @ 200mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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The RJU002N06T106 is a single depletion-mode MOSFET transistor. This specific device is a discrete component, as opposed to being part of an integrated circuit. This particular MOSFET transistor is commonly found in battery-powered consumer electronics like mobile phones, tablets, music players and laptops.
MOSFET transistors have numerous application fields; they are often used as switches to control current flow across small and large circuit boards. They are also used in amplifiers, frequency multipliers, adjustable capacitors, voltage regulators and power supplies, among other applications. The RJU002N06T106\'s application field is switching, and its prominent characteristics are low voltage and power consumption, high switching speed and low input capacitance.
The working principle of a MOSFET transistor is based on a phenomenon known as the ‘MOS effect’. This effect is created through the movement of electrons within a semiconductor material. The basic structure of the MOSFET transistor consists of a P-type and an N-type material. The source is connected to the P-type material, and the drain is connected to the N-type material. The P-type material is said to be a majority carrier region, whereas the N-type material is called the minority carrier region.
The application of different voltages to the gate of a MOSFET transistor creates a potential difference between the P-type and the N-type. The voltage difference between the drain and the source creates a current, which is also known as the ‘MOS current’. When a gate voltage is applied, the current through the channel increases, and its resistance decreases, allowing for a higher flow of current between the source and the drain.
In the RJU002N06T106 MOSFET transistor, the source is connected to the P-type material, and the drain is connected to the N-type. The gate is centrally located and sandwiched between the P and N materials. The quality of this particular MOSFET transistor makes it ideal for applications involving low voltage and power consumption, high switching speed and low input capacitance. For this reason, it is often used in audio systems, computer peripherals, audio amplifiers and low-noise satellite devices.
In summary, the RJU002N06T106 is a single depletion-mode MOSFET transistor that belongs to a family of integrated circuit components. It is often found in small electronics due to its low voltage and power consumption, high switching speed, and low input capacitance. Its main application field is switching and its operation is based on the \'MOS effect\'. It is frequently used in audio systems, computer peripherals, audio amplifiers and low-noise satellite devices.
The specific data is subject to PDF, and the above content is for reference
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