Allicdata Part #: | RLZTE-114.7C-ND |
Manufacturer Part#: |
RLZTE-114.7C |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | DIODE ZENER 4.7V 500MW LLDS |
More Detail: | Zener Diode 4.7V 500mW ±3% Surface Mount LLDS |
DataSheet: | RLZTE-114.7C Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 4.7V |
Tolerance: | ±3% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 25 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 1V |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-213AC, MINI-MELF, SOD-80 |
Supplier Device Package: | LLDS |
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The RLZTE-114.7C is a single Zener diode that finds several applications in modern electronics. Its low-generating voltage, low breakdown voltage, and high stability make it an ideal choice for day-to-day use. This diode is also a popular option for circuit protection and for establishing stabilizing circuits. The specifications of this diode make it suitable for various switching, logic, and power applications.
The RLZTE-114.7C has a maximum reverse breakdown voltage of 1.2V and a maximum power dissipation of 250mW. Its breakdown voltage and power dissipation are determined at an ambient temperature of 25°C. The absolute maximum ratings of this diode are determined at 100°C. The minimum reverse-leakage current must not exceed 100µA and the maximum junction temperature must not exceed 125°C. The lead length of this diode is 0.3mm.
The RLZTE-114.7C is designed to help industries save costs by using cost-effective, highly stable parts with a robust design. This diode is designed to meet automotive applications and a wide range of industrial requirements, making it suitable for diverse applications. The low-profile surface-mounted device, with its 1.2V breakdown voltage and high-stability, provides considerable performance for light-sensing applications, logic circuits, and power regulating. The diode’s high forward-conducting current, good reverse-doping characteristics, and low-turn-on voltage, provide exceptional performance and low-power consumption.
The Zener properties of the RLZTE-114.7C are the main selling point of this diode. The Zener properties of a diode are determined by its reverse breakdown voltage and maximum power dissipation. It exhibits low-turn-on voltage and a high breakdown voltage. Furthermore, the diode’s output impedance, overdrive capability, thermal stability and long-term stability are also excellent. Thus, the RLZTE-114.7C is suitable for many applications in the automotive and industrial sectors.
The RLZTE-114.7C has three base leads. The first lead acts as the gate or control lead and the other two serve as the anode and cathode respectively. The anode is connected to the positive terminal of the power source, while the cathode is connected to the negative terminal. A voltage is then applied to the gate lead, which will cause the diode to become conducting. The diode is also used in reverse-biased applications, wherein the applied voltage polarity is inverted, which causes the diode to block the current.
The RLZTE-114.7C is most commonly used in low-voltage applications and logic circuits. In such applications, it is usually incorporated in either a constant-voltage (Zeners) or a variable-voltage (Peltier thermistors) circuit. In variable-voltage circuits, the diode acts as a voltage stabilizer. Its low-generating voltage, low breakdown voltage, and high stability makes it an important component for such circuitry.
The RLZTE-114.7C is an ideal choice for day-to-day use, providing reliable performance in a variety of applications. Its high stability, low-generating voltage, low breakdown voltage, and easy-to-use features makes it an excellent choice for many industrial applications. The diode is versatile and cost-effective, and its low forward voltage drop makes it suitable for both switching and logic applications. This diode is ideal for circuit protection, light-sensing, and power-regulating circuitry.
The specific data is subject to PDF, and the above content is for reference
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