RLZTE-118.2B Allicdata Electronics
Allicdata Part #:

RLZTE-118.2B-ND

Manufacturer Part#:

RLZTE-118.2B

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE ZENER 8V 500MW LLDS
More Detail: Zener Diode 8V 500mW ±3% Surface Mount LLDS
DataSheet: RLZTE-118.2B datasheetRLZTE-118.2B Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 8V
Tolerance: ±3%
Power - Max: 500mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 5V
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: LLDS
Description

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Diodes are ubiquitous parts in the electronics industry, and their use is widespread across a wide range of applications. The RLZTE-118.2B is one type of diode with a very specific application and working principle which, when understood, can offer great benefits in the right application.

The RLZTE-118.2B is a type of Zener diode, which is a type of diode specifically designed for use in a reverse-biased mode, meaning it is operated in reverse from the forward-biased mode which would be used in most other types of diodes. The RLZTE-118.2B is a single diode, meaning that it is composed of two regions of semiconductor material separated by an exposed junction between them.

A Zener diode provides a fixed and predictable voltage drop in a reverse-biased mode. This means that when a voltage larger than the diode’s breakdown voltage is applied to it, it will break down, preventing any further voltage rise beyond a predefined level. This has a number of useful applications, such as providing a reference voltage in analog circuits, and providing a protection against overvoltage conditions.

The RLZTE-118.2B diode has a very specific breakdown voltage of 118 volts, which means it can be used in applications that require a specific, exact breakdown voltage. This is useful in many situations, such as when precise voltage regulation is needed, or when an exact voltage drop is desired. The RLZTE-118.2B is also able to handle very large currents, up to 5 amperes, making it suitable for a wide range of applications. Further, the diode is also rated for a very small “on” resistance, meaning it can handle large current spikes without significant voltage drops across its structure.

In summary, the RLZTE-118.2B diode is a perfect candidate for a wide range of applications where a precise voltage regulation and current handling capability is desired. Its breakdown voltage makes it ideal for providing a back reference voltage in analog circuits, as well as providing protection against overvoltage conditions, while its low on-resistance and large current handling capability makes it ideal for applications where high current spikes or loads are present. With its wide range of operating characteristics, the RLZTE-118.2B is an ideal choice for many electronic projects.

The specific data is subject to PDF, and the above content is for reference

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