RLZTE-118.2C Allicdata Electronics
Allicdata Part #:

RLZTE-118.2C-ND

Manufacturer Part#:

RLZTE-118.2C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: DIODE ZENER 8V 500MW LLDS
More Detail: Zener Diode 8V 500mW ±3% Surface Mount LLDS
DataSheet: RLZTE-118.2C datasheetRLZTE-118.2C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Voltage - Zener (Nom) (Vz): 8V
Tolerance: ±3%
Power - Max: 500mW
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 5V
Operating Temperature: --
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: LLDS
Description

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A Zener diode is a type of diode designed to operate in the reverse-bias breakdown region and provide a voltage reference level. Commonly referred to as a “Zener”, a Zener diode is an essential component in linear regulator designs. The RLZTE-118.2C single-line Zener diode is a low-power, high-performance device suitable for various applications.

The RLZTE-118.2C series features an optimized voltage range of 3.9V to 118.2V, a maximum power rating of 0.5W, and a low leakage current of 10μA. It has a typical Zener impedance of 7 Ω and a maximum Zener impedance of 40 Ω. The reverse-breakdown voltage is specified for a maximum current of 1mA and a maximum junction temperature of 125°C.

This Zener diode is suitable for uses in circuits requiring a regulated low-current voltage source, such as a low-voltage reference for precision designs. It is typically used in linear regulator designs, power applications, reverse battery protection circuits, and Zener diode voltage-clamping circuits.

The RLZTE-118.2C Zener diode consists of two basic components: a Cathode and an Anode. When used in a reverse-bias configuration, a voltage drop occurs across the Cathode and Anode which is known as the Zener Voltage (Vz). This voltage drop is controlled by varying the amount of reverse current applied to the diode.

When forward-biased, the RLZTE-118.2C provides a low forward voltage drop of 0.3V typical. This low voltage drop contributes to better efficiency and overall power dissipation when used in an application.

The RLZTE-118.2C can also be used in a breakdown configuration – when a sufficient amount of reverse voltage is applied, an avalanche breakdown occurs and a low-impedance current path is created. This breakdown occurs when the reverse voltage exceeds the Zener Voltage, and the current through the diode is limited by the Zener Impedance.

The RLZTE-118.2C is also useful for overvoltage protection applications. When used in this manner, the diode limits the maximum voltage level of the electrical system by providing an alternate current path around the damageable components. Since the current through the diode is limited by the Zener impedance, there is minimal additional power dissipation and overall increased system efficiency.

In summary, the RLZTE-118.2C is a single-line Zener diode suitable for various applications. It features an optimized voltage range of 3.9V to 118.2V, a maximum power rating of 0.5W, and a low leakage current of 10μA. It is typically used in linear regulator designs, power applications, reverse battery protection circuits, Zener diode voltage-clamping circuits, and overvoltage protection applications.

The specific data is subject to PDF, and the above content is for reference

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