Allicdata Part #: | RMLV0408EGSB-4S2#AA1-ND |
Manufacturer Part#: |
RMLV0408EGSB-4S2#AA1 |
Price: | $ 4.27 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Renesas Electronics America |
Short Description: | IC SRAM 4M PARALLEL 32TSOP II |
More Detail: | SRAM Memory IC 4Mb (512K x 8) Parallel 45ns 32-TS... |
DataSheet: | RMLV0408EGSB-4S2#AA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 3.88080 |
10 +: | $ 3.54249 |
25 +: | $ 3.47483 |
50 +: | $ 3.45101 |
100 +: | $ 3.09582 |
250 +: | $ 3.08393 |
500 +: | $ 2.89142 |
1000 +: | $ 2.76837 |
5000 +: | $ 2.46475 |
Specifications
Series: | -- |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM |
Memory Size: | 4Mb (512K x 8) |
Write Cycle Time - Word, Page: | 45ns |
Access Time: | 45ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-SOIC (0.400", 10.16mm Width) |
Supplier Device Package: | 32-TSOP II |
Description
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Application Field
RMLV0408EGSB-4S2#AA1 is a type of memory, commonly used in several applications. These applications range from lightweight mobile devices to robust industrial machines. Some of the common uses of this memory include use as a storage medium, for various types of data processing, and as an embedded application source. Additionally, this memory can be used for memory-related tasks in a computer system, such as with graphics and image processing.Working Principle
The RMLV0408EGSB-4S2#AA1 memory is designed to be highly reliable and efficient in its functions, making it an ideal choice for critical applications. The memory works by performing a series of read-write cycles in order to store and retrieve information. The read-write cycles take place using an array of memory cells, similar to those found in hard drive memory, which are arranged in an array of rows and columns.Each cell can store a single bit of information, which consists of either a 0 or 1. The cells can be programmed in a variety of ways, such as an erase cycle or by setting the cell to a designated data pattern. The cells are programmed and read by sending electrical signals to the array of rows and columns, which denotes the instructions for each cell.The RMLV0408EGSB-4S2#AA1 memory chip can also be tailored by extending the word length and data width, allowing for increased memory capacity and versatility in the application. This means that the chip can be used for various types of data processing and storage purposes, with the key being that it uses an array of cells to store data.In terms of power consumption, the chip is also highly efficient and low-cost in comparison to other types of memory, allowing for cost savings in industrial applications and lower power consumption when used in mobile devices.Conclusion
The RMLV0408EGSB-4S2#AA1 memory chip is a type of efficient, reliable and cost-effective memory designed to serve a variety of applications ranging from lightweight mobile devices to robust industrial machines. It is designed to work by performing a series of read-write cycles in order to store and retrieve information, and can be tailored to provide increased memory capacity and versatility. This chip is effective in helping to save both cost and power consumption, making it an ideal choice for industrial and mobile applications.The specific data is subject to PDF, and the above content is for reference
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RMLV0408EGSA-4S2#KA1 | Renesas Elec... | 3.05 $ | 1000 | IC SRAM 4M PARALLEL 32STS... |
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RMLV0414EGSB-4S2#AA1 | Renesas Elec... | 4.27 $ | 1000 | IC SRAM 4M PARALLEL 44TSO... |
RMLV0414EGSB-4S2#HA1 | Renesas Elec... | 3.05 $ | 1000 | IC SRAM 4M PARALLEL 44TSO... |
RMLV0416EGSB-4S2#AA1 | Renesas Elec... | 4.27 $ | 1000 | IC SRAM 4M PARALLEL 44TSO... |
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