RMLV0408EGSB-4S2#HA0 Allicdata Electronics
Allicdata Part #:

RMLV0408EGSB-4S2#HA0-ND

Manufacturer Part#:

RMLV0408EGSB-4S2#HA0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 4M PARALLEL 32TSOP II
More Detail: SRAM Memory IC 4Mb (512K x 8) Parallel 45ns 32-TS...
DataSheet: RMLV0408EGSB-4S2#HA0 datasheetRMLV0408EGSB-4S2#HA0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Supplier Device Package: 32-TSOP II
Base Part Number: RMLV0408
Description

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The RMLV0408EGSB-4S2#HA0 is a type of memory module used in a wide range of digital electronic devices. It is used to store digital data and is usually connected to a digital processing system or other memory modules. The memory module is used in many applications such as industrial automation, consumer electronics, medical equipment, automotive systems, and military electronics.

The RMLV0408EGSB-4S2#HA0 module is based on a dynamic random access memory (DRAM) technology. DRAM uses a transistor device as a computer processor. The DRAM technology allows for fast read/write speeds and is an efficient way of storing large amounts of data. The RMLV0408EGSB-4S2#HA0 module is an 8-bit wide memory module, which means it can store 8 bits of data at a time.

The RMLV0408EGSB-4S2#HA0 module has a number of features that make it well-suited for a variety of applications. It has a fast access time of 10ns and has an excellent data retention capability. The module also features an automatic write-protect, which prevents accidental data loss. The module is also capable of error correction, allowing it to detect and fix errors in data stored on the module.

The RMLV0408EGSB-4S2#HA0 module is used in a wide range of applications. It is often used in industrial automation systems for data storage and processing of large amounts of data. It is also often used in medical equipment, automotive systems, and military electronics. The RMLV0408EGSB-4S2#HA0 module can also be used in consumer electronics, such as in personal computers, tablets, and mobile phones.

The working principle of the RMLV0408EGSB-4S2#HA0 module is based on the single transistor dynamic random access memory (DRAM) technology. The DRAM technology uses a single transistor and capacitor to store each bit of digital data. The transistor is responsible for the read/write and refresh operations, while the capacitor stores the actual data. When the digital device needs to store data, the data is sent to the capacitor, which is then transferred to the transistor.

When the device needs to access the data, the transistor is switched to its read state, which allows the transistor to transfer the data back to the capacitor. The data can then be read from the capacitor and used by the device. The refresh operation is used to maintain the data stored in the module and ensures it is accurate. The RMLV0408EGSB-4S2#HA0 module also features a self-refreshing option, which helps maintain data accuracy over time.

The RMLV0408EGSB-4S2#HA0 module is well-suited for a wide range of digital devices and applications due to its excellent data retention capability and fast access time. The module can be used for industrial automation, consumer electronics, medical equipment, automotive systems, and military electronics.

The specific data is subject to PDF, and the above content is for reference

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