RMLV0416EGSB-4S2#AA0 Allicdata Electronics
Allicdata Part #:

RMLV0416EGSB-4S2#AA0-ND

Manufacturer Part#:

RMLV0416EGSB-4S2#AA0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 4M PARALLEL 44TSOP2
More Detail: SRAM Memory IC 4Mb (256K x 16) Parallel 45ns 44-T...
DataSheet: RMLV0416EGSB-4S2#AA0 datasheetRMLV0416EGSB-4S2#AA0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP2
Base Part Number: RMLV0416
Description

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Memory is an essential element of all computing systems, providing storage for executable instructions and data. The RMLV0416EGSB-4S2#AA0 is an example of a memory module that allows efficient storage and retrieval of data.

RMLV0416EGSB-4S2#AA0 is an Extended Data Output Dynamic Random Access Memory (EDO DRAM) module. It contains 4 1-megabit EDO DRAM chips connected in parallel, each one having its own 16 bit output port. The four chips are grouped in pairs, each pair forming a 64-bit memory bank. Together the four banks form a total of 256 bits of memory. The EDO DRAM design significantly increases speed and efficiency of memory operations by allowing information to be accessed in a single cycle, as opposed to the two cycles required by usual DRAMs.

RMLV0416EGSB-4S2#AA0 is is used in a wide variety of applications, primarily those in which faster data retrieval and storage is needed. It is most commonly found in personal computers, and is used in many other specially-designed machines, such as servers and workstations. RMLV0416EGSB-4S2#AA0 is a high-speed, high-capacity memory device, capable of data transfer rates up to 100 MHz. It is also capable of being used in multiple systems, as it is designed to handle a variety of electrical conditions, temperatures, and power supplies.

When the RMLV0416EGSB-4S2#AA0 is in operation, the four memory banks operate independently, with each bank able to access a separate 32-bit data array. Each bank executes an independent memory cycle, and accesses a different row of memory. This allows the RMLV0416EGSB-4S2#AA0 to complete its data cycle in a single clock cycle, rather than the two cycles required by a traditional memory module. The EDO DRAM design also eliminates the need for wait states and page mode, which further increases the speed of operations.

At the heart of the RMLV0416EGSB-4S2#AA0 is the EDO DRAM design, which allows it to operate at significantly higher speeds when compared to traditional memory modules. It is a cost-effective and efficient means of storing and accessing data, and is suitable for a wide variety of applications. Its use of EDO DRAM design makes it an ideal choice for applications that need fast, reliable performance.

The specific data is subject to PDF, and the above content is for reference

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