RMLV0808BGSB-4S2#HA0

Memory: RMLV0808BGSB-4S2#HA0 Application Field and Working Principle

RMLV0808BGSB-4S2#HA0 is a type of dynamic random access memory (DRAM) with a bidirectional data-strobe (DQS) or data strobe controlled strobe (DCS) as its technology. The device is commonly used as a buffer memory; it stores data temporarily in a random access memory (RAM) and then transfers it in blocks to an external memory device. RMLV0808BGSB-4S2#HA0 is a low-power, high-speed and cost-effective option for use in a wide range of embedded and general-purpose computing applications.

Application Field

RMLV0808BGSB-4S2#HA0 is used in a wide range of embedded and general-purpose computing applications. It is suitable for automotive, networking, gaming and consumer electronics applications. The device is used for buffering large data transfers, such as execute in place applications, which require fast and frequent data switching between two devices. It is also used in digital signal processing (DSP) systems and in high-end graphics processors. Furthermore, the device can be used as the main memory in some small devices, such as digital cameras or PDAs.

Working Principle

RMLV0808BGSB-4S2#HA0 consists of an array of memory cells, which is organized in a rectilinear planar array. The array is divided into an addressable grid of rows and columns. Each row and column are connected to two signal lines; one is used to read (DQS) and the other is used to write (DCS). The memory cells are connected to each other via a series of word line and bit line pairs. Data is transferred to and from the memory cells via a series of amplifiers that sense the data and pass it between the word and bit line, which in turn drives the data onto the data strobes.

When data is written to the memory cell, the data strobe activates and opens the row and column access transistors of the addressable memory cell. The transistors drive the data strobe current and the data strobe voltage to the required levels. The data strobe causes the bit line and word line pairs to switch from read to write mode and the data is written to the specified memory cell. When data is read from the memory cell, the data strobe activates and the transistors drive the bit line and word line pairs back to read mode. The data strobe voltage and current drive the data from the memory cell through the bit line and word line, to the data strobe.

Conclusion

RMLV0808BGSB-4S2#HA0 is a cost-effective and high-speed solution for embedded and general-purpose computing applications. It has a bidirectional data-strobe (DQS) or data strobe controlled strobe (DCS) that makes it ideal for large data transfers. The device is organized in an addressable grid of rows and columns, with each row and column connected to two signal lines that can be used to read and write data on the memory cells.