RMLV0408EGSB-4S2#HA1 Allicdata Electronics
Allicdata Part #:

RMLV0408EGSB-4S2#HA1-ND

Manufacturer Part#:

RMLV0408EGSB-4S2#HA1

Price: $ 3.05
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 4M PARALLEL 32TSOP II
More Detail: SRAM Memory IC 4Mb (512K x 8) Parallel 45ns 32-TS...
DataSheet: RMLV0408EGSB-4S2#HA1 datasheetRMLV0408EGSB-4S2#HA1 Datasheet/PDF
Quantity: 1000
1000 +: $ 2.76837
Stock 1000Can Ship Immediately
$ 3.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 4Mb (512K x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Supplier Device Package: 32-TSOP II
Description

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Memory

RMLV0408EGSB-4S2#HA1 is a high performance Synchronous DRAM, integrated with Echo™ Technologies, working with the PC100 and PC-133 industry standard architecture. It offers a high data bandwidth for real-time video streaming, image processing and graphic display. It features low power, low latency access and single-cycle latency found in high-performance memory systems.

Application Field

RMLV0408EGSB-4S2#HA1 is mainly used in server and workstation applications, since it provides high bandwidth and transfer rates up to 266/533 MB/s with fast cycle - times of 5/7 ns. It also has low power dissipation and ECC capabilities making it ideal for mission-critical applications that demand high reliability and scalability.

Working Principle

RMLV0408EGSB-4S2#HA1 utilizes an array of internal lines working between memory and processor to execute read and write operations. The array allows for simultaneous processing of multiple requests where each line can access the same address location. This facilitates a more efficient transfer of data than the traditional single-address line implementation. In order to ensure each request is properly processed, the RMLV0408EGSB-4S2#HA1’s architecture utilizes the Echo™ ECC technology to detect errors and prevent data corruption.

The RMLV0408EGSB-4S2#HA1 can be used as either as a stand-alone module, or as part of a larger memory system. The system uses inter-connection technologies such as SerDes to facilitate communication both within and outside the module, allowing multiple devices to access the data simultaneously. The system also incorporates built-in error correcting mechanisms and data protection circuitry that ensures the integrity of the data, even when multiple devices are accessing the same address location.

RMLV0408EGSB-4S2#HA1 is designed to meet the increasing demands of today’s modern computer applications. It features single-cycle latency and provides full-duplex data transfers for improved efficiency and scalability. In addition, the system includes built-in ECC technology and additional memory protection features, making it an ideal solution for mission-critical applications.

The specific data is subject to PDF, and the above content is for reference

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